Method of making a thin film transistor device
First Claim
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1. A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a metal substrate;
forming a semiconductor layer over the first insulating film;
forming a second insulating film over the semiconductor layer and the first insulating film;
forming a gate electrode over the second insulating film;
removing a portion of the second insulating film, so as to expose a portion of the first insulating film;
forming a third insulating film over the gate electrode and the second insulating film and contacting the portion of the first insulating film;
partly removing the third insulating film so as to expose the portion of the first insulating film; and
forming a wiring line electrically connected to the semiconductor layer and in contact with the portion of said first insulating film,wherein a storage capacitor is formed of the metal substrate and the wiring line, with the portion of the first insulating film therebetween.
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Abstract
In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.
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Citations
34 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming a first insulating film over a metal substrate; forming a semiconductor layer over the first insulating film; forming a second insulating film over the semiconductor layer and the first insulating film; forming a gate electrode over the second insulating film; removing a portion of the second insulating film, so as to expose a portion of the first insulating film; forming a third insulating film over the gate electrode and the second insulating film and contacting the portion of the first insulating film; partly removing the third insulating film so as to expose the portion of the first insulating film; and forming a wiring line electrically connected to the semiconductor layer and in contact with the portion of said first insulating film, wherein a storage capacitor is formed of the metal substrate and the wiring line, with the portion of the first insulating film therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a semiconductor device comprising:
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forming a first insulating film over a metal substrate; forming a semiconductor layer over the first insulating film; forming a second insulating film over the semiconductor layer and the first insulating film; forming a gate electrode over the second insulating film; removing a portion of the second insulating film, so as to expose a portion of the first insulating film; forming a third insulating film over the semiconductor layer and the second insulating film and contacting the portion of the first insulating film; partly removing the third insulating film so as to expose the portion of the first insulating film; forming a contact hole in the third insulating film; and forming a wiring line electrically connected to the semiconductor layer through the contact hole and in contact with the portion of said first insulating film, wherein a storage capacitor is formed of the metal substrate and the wiring line, with the portion of the first insulating film therebetween. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of manufacturing a semiconductor device comprising:
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forming a first insulating film over a metal substrate; forming a semiconductor layer over the first insulating film; forming a second insulating film over the semiconductor layer and the first insulating film; forming a gate electrode over the second insulating film; removing a portion of the second insulating film, so as to expose a portion of the first insulating film; forming a third insulating film over the gate electrode and the second insulating film and contacting the portion of the first insulating film; partly removing the third insulating film so as to expose the portion of the first insulating film; forming a first wiring line electrically connected to the semiconductor layer and in contact with the portion of said first insulating film, forming a fourth insulating film over the first wiring line; partly removing the fourth insulating film so as to expose a portion of the first wiring line; and forming a second wiring line electrically connected to the first wiring line, wherein a storage capacitor is formed of the metal substrate and the first wiring line, with the portion of the first insulating film therebetween. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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26. A method of manufacturing a semiconductor device comprising:
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forming a first insulating film over a metal substrate; forming a semiconductor layer over the first insulating film; forming a second insulating film over the semiconductor layer and the first insulating film; forming a gate electrode over the second insulating film; removing a portion of the second insulating film, so as to expose a portion of the first insulating film; forming a third insulating film over the gate electrode and the second insulating film and contacting the portion of the first insulating film; partly removing the third insulating film so as to expose the portion of the first insulating film; forming a contact hole in the third insulating film; and forming a first wiring line electrically connected to the semiconductor layer through the contact hole and in contact with the portion of said first insulating film; forming a fourth insulating film over the first wiring line; partly removing the fourth insulating film so as to expose a portion of the first wiring line; and forming a second wiring line electrically connected to the first wiring line, wherein a storage capacitor is formed of the metal substrate and the first wiring line, with the portion of the first insulating film therebetween. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34)
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Specification