×

Method of making a thin film transistor device

  • US 7,405,132 B2
  • Filed: 10/03/2005
  • Issued: 07/29/2008
  • Est. Priority Date: 09/06/2000
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of manufacturing a semiconductor device comprising:

  • forming a first insulating film over a metal substrate;

    forming a semiconductor layer over the first insulating film;

    forming a second insulating film over the semiconductor layer and the first insulating film;

    forming a gate electrode over the second insulating film;

    removing a portion of the second insulating film, so as to expose a portion of the first insulating film;

    forming a third insulating film over the gate electrode and the second insulating film and contacting the portion of the first insulating film;

    partly removing the third insulating film so as to expose the portion of the first insulating film; and

    forming a wiring line electrically connected to the semiconductor layer and in contact with the portion of said first insulating film,wherein a storage capacitor is formed of the metal substrate and the wiring line, with the portion of the first insulating film therebetween.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×