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Method for fabricating a seed layer

  • US 7,405,143 B2
  • Filed: 03/25/2004
  • Issued: 07/29/2008
  • Est. Priority Date: 03/25/2004
  • Status: Active Grant
First Claim
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1. A method for metallizing an integrated circuit, the method comprisingdepositing a diffusion barrier on a substrate;

  • oxidizing a top layer of the diffusion barrier to form a metal oxide layer, wherein the oxidizing forms the metal oxide layer from metal in the diffusion barrier;

    reducing the oxidation state of the metal oxide layer formed by oxidizing the top layer of the diffusion barrier to form a first seed layer; and

    depositing a conductor directly on the first seed layer.

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