Methods for depositing tungsten layers employing atomic layer deposition techniques

• US 7,405,158 B2
• Filed: 01/19/2005
• Issued: 07/29/2008
• Est. Priority Date: 06/28/2000
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Gelatos, Averginos V., Xi, Ming, Chung, Hua, Huang, Chao-Ming, Fang, Hongbin, Khandelwal, Amit, Byun, Jeong Soo, Yang, Michael X., Gandikota, Srinivas, Lai, Ken Kaung, Moorthy, Madhu, Knepfler, Cheryl, Rajagopalan, Ravi, Jian, Ping, Castro, Joseph
• Primary Examiner(s): Lebentritt; Michael S.
• Assistant Examiner(s): Isaac; Stanetta D
• Application Number:
  US11/038,592
• Publication Number:
  US 20060009034A1
• Time in Patent Office: 1,287 Days
• Field of Search: 438/677, 438/680, 257/E21.171, 257/E21.585
• US Class Current: 438/680
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/08 from metal halides
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/7687 Thin films associated with contacts of capacitors
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 2221/1089 Stacks of seed layers

Abstract

In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Claims

1. A method for forming a tungsten-containing material on a substrate, comprising:

positioning a substrate containing a barrier layer disposed thereon within a process chamber;

exposing the substrate to a reducing gas to form a first reducing agent layer on the barrier layer during a first soak process;

depositing a nucleation layer over the barrier layer by sequentially exposing the substrate to a tungsten-containing precursor and a reductant during an atomic layer deposition process;

exposing the substrate to the reducing gas to form a second reducing agent layer on the nucleation layer during a second soak process; and

depositing a bulk layer over the nucleation layer.

2. The method of claim 1, wherein the barrier layer comprises titanium or titanium nitride.

3. The method of claim 1, wherein the reducing gas comprises a reducing agent selected from the group consisting of hydrogen, silane, diborane, derivatives thereof, and combinations thereof.

4. The method of claim 3, wherein the tungsten-containing precursor comprises tungsten hexafluoride and the reductant comprises silane.

5. The method of claim 3, wherein the tungsten-containing precursor comprises tungsten hexafluoride and the reductant comprises diborane.

6. The method of claim 5, wherein the nucleation layer has a thickness of about 200 Å

or less.

7. The method of claim 1, wherein the bulk layer is deposited by a chemical vapor deposition process.

8. The method of claim 1, wherein the barrier layer comprises tungsten nitride.

9. The method of claim 8, wherein the barrier layer comprises a tungsten nitride-containing layer disposed over a tungsten layer.

10. The method of claim 8, wherein the barrier layer comprises a combination film of tungsten and tungsten nitride.

11. The method of claim 1, wherein the reducing gas comprises diborane.

12. A method for forming a tungsten-containing material on a substrate, comprising:

positioning a substrate within a process chamber;

exposing the substrate to a reducing gas to form a first reducing agent layer on the substrate during a pre-soak process;

depositing a nucleation layer over the substrate by sequentially exposing the substrate to a tungsten-containing precursor and a reductant during an atomic layer deposition process;

exposing the substrate to the reducing gas to form a second reducing agent layer on the nucleation layer during a second soak process; and

depositing a bulk layer over the second reducing agent layer.

13. The method of claim 12, wherein the substrate comprises a barrier layer and the barrier layer comprises titanium or titanium nitride.

14. The method of claim 12, wherein the reducing gas comprises a reducing agent selected from the group consisting of hydrogen, silane, diborane, derivatives thereof, and combinations thereof.

15. The method of claim 12, wherein the tungsten-containing precursor comprises tungsten hexafluoride and the reductant comprises silane.

16. The method of claim 12, wherein the tungsten-containing precursor comprises tungsten hexafluoride and the reductant comprises diborane.

17. The method of claim 12, wherein the nucleation layer has a thickness of about 200 Å

or less.

18. The method of claim 12, wherein the bulk layer is deposited by a chemical vapor deposition process.

19. The method of claim 12, wherein the substrate comprises a barrier layer comprising tungsten nitride.

20. The method of claim 19, wherein the barrier layer comprises a tungsten nitride-containing layer disposed over a tungsten layer.

21. The method of claim 19, wherein the barrier layer comprises a combination film of tungsten and tungsten nitride.

22. The method of claim 12, wherein the reducing gas comprises diborane.

23. A method for forming a tungsten-containing material on a substrate, comprising:

positioning a substrate containing a barrier layer disposed thereon within a process chamber;

exposing the substrate to a reducing gas during a first soak process;

depositing a nucleation layer over the barrier layer by a pulsed chemical vapor deposition process or an atomic layer deposition process;

exposing the nucleation layer to the reducing gas during a second soak process; and

depositing a bulk layer over the nucleation layer by a chemical vapor deposition process.

24. The method of claim 23, wherein the barrier layer comprises tungsten nitride.

25. The method of claim 24, wherein the barrier layer comprises a tungsten nitride-containing layer disposed over a tungsten layer.

26. The method of claim 24, wherein the barrier layer comprises a combination film of tungsten and tungsten nitride.

27. A method for forming a tungsten-containing material on a substrate, comprising:

positioning a substrate containing a barrier layer disposed thereon within a process chamber, wherein the barrier layer comprises tungsten;

exposing the substrate to a reducing gas during a first soak process;

depositing a first nucleation layer over the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber;

depositing a second nucleation layer over the first nucleation layer;

depositing a bulk layer over the second nucleation layer; and

exposing the first nucleation layer or the second nucleation layer to the reducing gas to form a reducing agent layer during a second soak process.

28. The method of claim 27, wherein the reducing gas comprises diborane.

29. A method for forming a tungsten-containing material on a substrate, comprising:

positioning a substrate containing a barrier layer disposed thereon within a process chamber, wherein the barrier layer comprises a combination film of tungsten and tungsten nitride;

exposing the substrate to a reducing gas to form a first reducing agent layer on the barrier layer during a first soak process; and

depositing a nucleation layer over the barrier layer by sequentially exposing the substrate to a tungsten-containing precursor and a reagent during an atomic layer deposition process; and

exposing the substrate to the reducing gas to form a second reducing agent layer on the nucleation layer during a second soak process.