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Method of manufacturing charge storage device

  • US 7,405,166 B2
  • Filed: 04/19/2006
  • Issued: 07/29/2008
  • Est. Priority Date: 01/10/2006
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a charge storage device, comprising the steps of:

  • providing a substrate;

    forming a stacked insulation layer over the substrate, wherein the stacked insulation layer comprises a plurality of gradual material layers having a general formula bycz or axbycz, a, b, c represents different elements and the value of y changes from the bottom to the top of each gradual material layer, however, the value of the sum x+y+z remains fixed at 100%;

    forming a mask layer over the stacked insulation layer;

    patterning the mask layer and the stacked insulation layer to form an opening that exposes the substrate;

    performing an etching process to form an irregular pattern on the sidewalls of the opening; and

    forming a lower electrode on the sidewalls of the opening and over the substrate.

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