Capacitor constructions and semiconductor structures
First Claim
1. A capacitor construction, comprising:
- a first capacitor electrode, the first capacitor electrode including a stack comprising at least three semiconductor layers, two of the three semiconductor layers being adjacent one another;
a bottom of the stack being conductively-doped semiconductor material and an outer surface of the stack being a rugged semiconductor surface, there being an interface layer in the stack, the interface layer being between the adjacent semiconductor layers;
wherein the conductively-doped semiconductor material of the bottom of the stack does not directly contact the rugged semiconductor outer surface of the stack;
at least one dielectric material over the first capacitor electrode; and
a second capacitor electrode over the at least one dielectric material.
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Abstract
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
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Citations
6 Claims
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1. A capacitor construction, comprising:
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a first capacitor electrode, the first capacitor electrode including a stack comprising at least three semiconductor layers, two of the three semiconductor layers being adjacent one another;
a bottom of the stack being conductively-doped semiconductor material and an outer surface of the stack being a rugged semiconductor surface, there being an interface layer in the stack, the interface layer being between the adjacent semiconductor layers;
wherein the conductively-doped semiconductor material of the bottom of the stack does not directly contact the rugged semiconductor outer surface of the stack;at least one dielectric material over the first capacitor electrode; and a second capacitor electrode over the at least one dielectric material. - View Dependent Claims (2, 3, 4)
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5. A capacitor construction, comprising:
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a first capacitor electrode, the first capacitor electrode including a stack comprising at least three semiconductor layers, two of the three semiconductor layers being adjacent one another;
a bottom of the stack being conductively-doped semiconductor material and an outer surface of the stack being a rugged semiconductor surface, there being an interface layer in the stack, the interface layer being between the adjacent semiconductor layers;
the conductively-doped semiconductor material of the bottom of the stack not being in direct contact with the rugged semiconductor surface;at least one dielectric material over the first capacitor electrode; a second capacitor electrode over the at least one dielectric material; and wherein the interface layer comprises silicon nitride.
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6. A capacitor construction, comprising:
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a first capacitor electrode, the first capacitor electrode including a stack comprising at least three semiconductor layers, two of the three semiconductor layers being adjacent one another;
a bottom of the stack being conductively-doped semiconductor material and an outer surface of the stack being a rugged semiconductor surface, there being an interface layer in the stack, the interface layer being between the adjacent semiconductor layers;
the conductively-doped semiconductor material of the bottom of the stack not being in direct contact with the rugged semiconductor surface;at least one dielectric material over the first capacitor electrode; a second capacitor electrode over the at least one dielectric material; and wherein the adjacent semiconductor layers consist of silicon or doped silicon, and the interface layer comprises Si/Ge.
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Specification