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Capacitor constructions and semiconductor structures

  • US 7,405,438 B2
  • Filed: 09/20/2004
  • Issued: 07/29/2008
  • Est. Priority Date: 04/25/2003
  • Status: Expired due to Fees
First Claim
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1. A capacitor construction, comprising:

  • a first capacitor electrode, the first capacitor electrode including a stack comprising at least three semiconductor layers, two of the three semiconductor layers being adjacent one another;

    a bottom of the stack being conductively-doped semiconductor material and an outer surface of the stack being a rugged semiconductor surface, there being an interface layer in the stack, the interface layer being between the adjacent semiconductor layers;

    wherein the conductively-doped semiconductor material of the bottom of the stack does not directly contact the rugged semiconductor outer surface of the stack;

    at least one dielectric material over the first capacitor electrode; and

    a second capacitor electrode over the at least one dielectric material.

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