Microelectronic assemblies having compliant layers

• US 7,408,260 B2
• Filed: 07/14/2006
• Issued: 08/05/2008
• Est. Priority Date: 10/31/1995
• Status: Expired due to Fees

• Current Assignee: Tessera, Inc. (Adeia Inc.)
• Original Assignee: Tessera, Inc. (Adeia Inc.)
• Inventors: Karavakis, Konstantine, Fjelstad, Joseph
• Primary Examiner(s): Jackson; Jerome
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US11/487,263
• Publication Number:
  US 20060261476A1
• Time in Patent Office: 753 Days
• Field of Search: 257/781, 257/777, 257/787, 257/773, 257/759, 257/642, 257/760, 257/784, 257/780, 257/776
• US Class Current: 257/734
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/0236 Shape of the insulating layers therebetween
• CPC Class Codes: H01L 2224/024 Material of the insulating layers therebetween
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/114 by blanket deposition of the material of the bump connector
• CPC Class Codes: H01L 2224/116 by patterning a pre-deposited material treatment of parts prior to assembly of the devices H01L21/48
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/1319 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/24011 Deposited, e.g. MCM-D type
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45155 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48624 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48724 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48824 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/85424 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3121 : a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/4951 : Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
• CPC Class Codes: H01L 23/498 : Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers shape of the substrate H01L23/13
• CPC Class Codes: H01L 23/525 : with adaptable interconnections
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/72 : Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01009 : Fluorine [F]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A microelectronic assembly includes a microelectronic element such as a semiconductor chip or wafer having a first surface and contacts accessible at the first surface, a compliant layer overlying the first surface of the microelectronic element, and conductive protrusions overlying the compliant layer and projecting away from the first surface of the microelectronic element, wherein the conductive protrusions are electrically interconnected with the contacts of the microelectronic element. The conductive protrusions are movable relative to said microelectronic element.

Claims

1. A microelectronic assembly comprising:

a microelectronic element having a first surface and contacts accessible at the first surface;

a plurality of protruding solderable terminals, each including;

a compliant layer defining a protrusion overlying the first surface of said microelectronic element, said protrusion having an edge surface extending away from the first surface of said microelectronic element and a tip remote from the first surface, at least a portion of the compliant layer being remote from said contacts; and

a solderable metal layer coating at least a portion of said tip;

said microelectronic element further including leads extending along said edge surfaces of said protrusions to conductively interconnect said protruding solderable terminals with said contacts of said microelectronic element.

2. The assembly as claimed in claim 1, wherein said protruding solderable terminals have apexes that define the highest point on said assembly.

3. The assembly as claimed in claim 1, wherein said protruding solderable terminals are movable relative to said microelectronic element.

4. The assembly as claimed in claim 1, wherein said edge surfaces of said protruding solderable terminals are curved.

5. The assembly as claimed in claim 1, wherein said edge surfaces of said protruding solderable terminals are spherical.

6. The assembly as claimed in claim 1, wherein said solderable metal layer comprises at least one material selected from the group consisting of copper, gold, nickel and alloys, combinations and composites thereof.

7. The assembly as claimed in claim 1, wherein said microelectronic element is a semiconductor chip.

8. The assembly as claimed in claim 1, wherein said microelectronic element is a semiconductor wafer.

9. The assembly as claimed in claim 1, further comprising a dielectric passivation layer disposed between the first surface of said microelectronic element and said compliant layer.

10. The assembly as claimed in claim 1, wherein said compliant layer comprises a material having a low modulus of elasticity.

11. The assembly as claimed in claim 1, wherein said compliant layer comprises a dielectric material.

12. The assembly as claimed in claim 1, wherein said compliant layer comprises a material selected from the group consisting of polymers, silicones, flexibilized epoxies, polyimides, thermosetting polymers, fluoropolymers and thermoplastic polymers.

13. The assembly as claimed in claim 1, wherein said compliant layer comprises a foam layer or a mesh layer.

14. The assembly as claimed in claim 1, wherein said solderable metal layer is formed by steps including electroplating.

15. The assembly as claimed in claim 1, further comprising a substrate having substrate terminals solder-bonded to said protruding solderable terminals.

16. The assembly as claimed in claim 1, further comprising a dielectric layer having an area larger than any one of said solderable terminals disposed between the first surface of the microelectronic element and the compliant layers of at least some of the solderable terminals such that the compliant layers protrude above a top surface of the dielectric layer.

17. The assembly as claimed in claim 16, wherein said dielectric layer includes a polymer.

18. The assembly as claimed in claim 17, wherein said dielectric layer is compliant.

19. The assembly as claimed in claim 18, wherein said plurality of protrusions extend upwardly beyond a top surface of said dielectric layer, and said protrusions are integrally formed with said dielectric layer.

20. The assembly as claimed in claim 18, wherein said plurality of protrusions extend from the top surface of said dielectric layer, said protrusions being attached to the top surface of said dielectric layer.

21. The assembly as claimed in claim 18, wherein said dielectric layer has a top surface and a sloping surface extending between the top surface of said dielectric layer and the first surface of said microelectronic element.

22. The assembly as claimed in claim 21, wherein the top surface of said dielectric layer is substantially flat.

23. The assembly as claimed in claim 16, wherein said leads extend along the top surface of said dielectric layer.