RFID device having nonvolatile ferroelectric memory device

• US 7,408,799 B2
• Filed: 09/25/2006
• Issued: 08/05/2008
• Est. Priority Date: 02/17/2006
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kang, Hee Bok
• Primary Examiner(s): PHAN, TRONG Q
• Application Number:
  US11/525,812
• Publication Number:
  US 20070195577A1
• Time in Patent Office: 680 Days
• Field of Search: 365/145, 365/149
• US Class Current: 365/145
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G11C 11/22 using ferroelectric elements

Abstract

A nonvolatile ferroelectric memory in an RFID device includes a plurality of word lines, and a plurality of banks each including a cell array. The cell array of one of the banks includes a region to be initialized, wherein the region includes a plurality of memory unit cells each including a ferroelectric capacitor, the memory unit cells being connected to the word lines. The ferroelectric capacitor of a first one of the memory unit cells is connected between a plate line and a cell transistor. The ferroelectric capacitor of a second one of the memory unit cells has one terminal connected to a ground terminal. The first one and the second one of the memory cells are respectively connected to a first one and a second one of the word lines, the first one and the second one of the word lines being connected to each other.

Claims

1. An RFID device having a nonvolatile ferroelectric memory, the nonvolatile ferroelectric memory comprising:

a plurality of word lines; and

a plurality of banks each including a cell array, the cell array of one of the banks including a region to be initialized, wherein the region includes a plurality of memory unit cells each including a ferroelectric capacitor, the memory unit cells being connected to the word lines,

wherein the ferroelectric capacitor of a first one of the memory unit cells has a first terminal connected to a plate line and a second terminal connected to a cell transistor,

the ferroelectric capacitor of a second one of the memory unit cells has a first terminal connected to a ground terminal, and

the first one and the second one of the memory cells are respectively connected to a first one and a second one of the word lines, the first one and the second one of the word lines being connected to each other.

2. The RFID device of claim 1, wherein the nonvolatile ferroelectric memory further comprises:

a plurality of pairs of bit lines;

an equalization unit configured to equalize one pair of bit lines to a ground voltage level; and

a sense amplifier configured to sense and amplify a voltage difference between the bit lines in one pair.

3. The RFID device of claim 1, wherein the ferroelectric capacitor of the second one of the memory unit cells has a second terminal that is floating.

4. The RFID device of claim 3, wherein the nonvolatile ferroelectric memory further comprises a plurality of pairs of bit lines, wherein each pair of bit lines includes a true bit line and a complement bit line, and wherein the first one of the memory units is initialized to a low level when the first one of the memory units is connected to the true bit line of one of the pairs of bit lines.

5. The RFID device of claim 3, wherein the nonvolatile ferroelectric memory further comprises a plurality of pairs of bit lines, wherein each pair of bit lines includes a true bit line and a complement bit line, and wherein the first one of the memory units is initialized to a high level when the first one of the memory units is connected to the complement bit line of one of the pairs of bit lines.

6. The RFID device of claim 1, wherein the nonvolatile ferroelectric memory has an open bit line structure.

7. The RFID device of claim 6, wherein the nonvolatile ferroelectric memory further comprises:

a plurality of pairs of bit lines;

an equalization unit configured to equalize one pair of bit lines; and

a sense amplifier configured to sense and amplify a voltage difference on the bit lines in one pair.

8. The RFID device of claim 6, wherein the ferroelectric capacitor of the second one of the memory unit cells has a second terminal that is floating.

9. The RFID device of claim 6, wherein the nonvolatile ferroelectric memory further comprises a plurality of pairs of bit lines, wherein each pair of bit lines includes a true bit line and a complement bit line, and wherein the first one of the memory units is initialized to a low level when the first one of the memory units is connected to the true bit line of one of the pairs of bit lines.

10. The RFID device of claim 6, wherein the nonvolatile ferroelectric memory further comprises a plurality of pairs of bit lines, wherein each pair of bit lines includes a true bit line and a complement bit line, and wherein the first one of the memory units is initialized to a high level when the first one of the memory units is connected to the complement bit line of one of the pairs of bit lines.

11. The RFID device of claim 1, wherein the nonvolatile ferroelectric memory has a folded bit line structure.

12. The RFID device of claim 11, wherein the memory further comprises:

a plurality of pairs of bit lines;

an equalization unit configured to equalize one pair of bit lines; and

a sense amplifier configured to sense and amplify a voltage difference on the bit lines in one pair.

13. The RFID device according to claim 11, wherein the ferroelectric capacitor of the second one of the memory unit cells has a second terminal that is floating.

14. The RFID device according to claim 11, wherein the ferroelectric capacitor of the second one of the memory unit cells has a second terminal connected to the second terminal of the ferroelectric capacitor of the first one of the memory unit cells.

15. The RFID device of claim 11, wherein the nonvolatile ferroelectric memory further comprises a plurality of pairs of bit lines, wherein each pair of bit lines includes a true bit line and a complement bit line, and wherein the first one of the memory units is initialized to a low level when the first one of the memory units is connected to the true bit line of one of the pairs of bit lines.

16. The RFID device of claim 11, wherein the nonvolatile ferroelectric memory further comprises a plurality of pairs of bit lines, wherein each pair of bit lines includes a true bit line and a complement bit line, and wherein the first one of the memory units is initialized to a high level when the first one of the memory units is connected to the complement bit line of one of the pairs of bit lines.

17. An RFID device having a nonvolatile ferroelectric memory, the nonvolatile ferroelectric memory comprising:

a plurality of word lines; and

a plurality of banks each including a cell array, the cell array of one of the banks including a region to be initialized, the region including a plurality of memory unit cells each including a ferroelectric capacitor, wherein the memory unit cells are connected to the word lines,

wherein the ferroelectric capacitor of a first one of the memory unit cells has a first terminal connected to a plate line and a second terminal connected to a cell transistor;

the ferroelectric capacitor of a second one of the memory unit cells has one terminal connected to a ground voltage, and

the first one and the second one of the memory cells are respectively connected to a first one and a second one of the word lines, the first one and the second one of the word lines being selected by a same row address.

18. The RFID device of claim 17, wherein the nonvolatile ferroelectric memory has an open bit line structure.

19. The RFID device of claim 17, wherein the nonvolatile ferroelectric memory has a folded bit line structure.