Method for reduced N+ diffusion in strained Si on SiGe substrate
First Claim
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1. A method for reducing diffusion of an N type impurity in a SiGe-based substrate, the method comprising steps of:
- forming source and drain extension regions in an upper surface of the SiGe-based substrate; and
ion implanting an interstitial element into the source and drain extension regions to reduce vacancy concentration in the source and drain extension regions and to form low-vacancy regions that substantially overlap the source and drain extension regions.
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Abstract
The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N type impurity contained in the first source and drain regions. The vacancy concentration is reduced by an interstitial element or a vacancy-trapping element in the first source and drain regions. The interstitial element or the vacancy-trapping element is provided by ion-implantation.
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Citations
20 Claims
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1. A method for reducing diffusion of an N type impurity in a SiGe-based substrate, the method comprising steps of:
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forming source and drain extension regions in an upper surface of the SiGe-based substrate; and ion implanting an interstitial element into the source and drain extension regions to reduce vacancy concentration in the source and drain extension regions and to form low-vacancy regions that substantially overlap the source and drain extension regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for reducing diffusion of an N type impurity in a SiGe substrate, the method comprising steps of:
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forming an Si cap layer on the SiGe substrate; forming a gate electrode on the Si cap layer; forming sidewalls on sides of the gate electrode; forming source and drain extension regions in an upper surface of the SiGe-based substrate; and ion implanting an interstitial element into the source and drain extension regions to reduce vacancy concentration in the source and drain extension regions, wherein the ion implanting occurs after the sidewalls are formed.
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20. A method for reducing diffusion of an N type impurity in a SiGe substrate, the method comprising steps of:
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forming an Si cap layer on the SiGe substrate; forming a gate electrode on the Si cap layer; forming sidewalls on sides of the gate electrode; forming source and drain extension regions in an upper surface of the SiGe substrate; and reducing a vacancy concentration in the source and drain extension regions using ion implantation in order to annihilate excess vacancies or trap vacancies, wherein the reducing occurs after the sidewalls are formed and forms low-vacancy regions that substantially overlap the source and drain extension regions.
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Specification