Method for reduced N+ diffusion in strained Si on SiGe substrate

• US 7,410,846 B2
• Filed: 09/09/2003
• Issued: 08/12/2008
• Est. Priority Date: 09/09/2003
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Chidambarrao, Dureseti, Dokumaci, Omer H.
• Primary Examiner(s): Pham; Long
• Application Number:
  US10/605,108
• Publication Number:
  US 20050054145A1
• Time in Patent Office: 1,799 Days
• Field of Search: 483/163, 483/199
• US Class Current: 438/163
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26566 of a cluster, e.g. using a gas cluster ion beam
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers

Abstract

The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N type impurity contained in the first source and drain regions. The vacancy concentration is reduced by an interstitial element or a vacancy-trapping element in the first source and drain regions. The interstitial element or the vacancy-trapping element is provided by ion-implantation.

Claims

1. A method for reducing diffusion of an N type impurity in a SiGe-based substrate, the method comprising steps of:

forming source and drain extension regions in an upper surface of the SiGe-based substrate; and

ion implanting an interstitial element into the source and drain extension regions to reduce vacancy concentration in the source and drain extension regions and to form low-vacancy regions that substantially overlap the source and drain extension regions.

2. The method of claim 1, wherein the interstitial element is Si or O.

3. The method of claim 1, further comprising a step of forming source and drain regions.

4. The method of claim 1, wherein the step of ion-implanting the interstitial element comprises a step of ion-implanting the interstitial element at an implantation concentration of approximately 1×

10¹⁴ atoms/cm² to 1×

10¹⁶ atoms/cm² and at an implantation energy of approximately 0.3 KeV to 100 KeV.

5. The method of claim 4, wherein a concentration peak of the interstitial element and a concentration peak of the N type impurity in the source and drain extension regions are formed at substantially the same depth from an upper surface of an Si cap layer.

6. The method of claim 5, wherein the concentration peak of the interstitial element is formed at a depth of approximately 10 Å

to 20000 Å

from the upper surface of the Si cap layer.

7. The method of claim 1, further comprising a step of annealing.

8. The method of claim 7, wherein the step of annealing is performed at a temperature of approximately 700°

C. to 1200°

C. for approximately 1 second to 3 minutes.

9. The method of claim 2, further comprising a step of forming source and drain regions in the upper surface of the SiGe-based substrate, the source and drain regions containing the N type impurity and overlapping the source and drain extension regions.

10. The method of claim 9, further comprising a step of providing an interstitial element in the source and drain regions.

11. The method of claim 1, further comprising forming an Si cap layer on the SiGe based substrate and straining biaxially in tension the Si cap layer to match an underlying relaxed SiGe lattice.

12. The method of claim 1, further comprising forming sidewalls on side surfaces of a gate electrode before the ion implanting, whereby the gate electrode is protected from the ion implanting.

13. The method of claim 1, wherein the vacancy concentration is reduced by annihilation of excess vacancies in the source and drain extension regions.

14. The method of claim 1, wherein the ion implanting occurs before the forming.

15. The method of claim 1, further comprising, before the ion implanting, forming sidewalls on side surfaces of a gate electrode, wherein the interstitial element comprises an N-type impurity.

16. The method of claim 1, wherein the interstitial element creates additional interstitials which react with and annihilate excessive vacancies in the SiGe based substrate.

17. The method of claim 1, wherein the ion implanting reduces an N-type impurity in source and drain regions, thereby improving roll-off characteristics.

18. The method of claim 1, wherein the ion implanting is performed in a self-aligned manner by using a gate electrode as a mask.

19. A method for reducing diffusion of an N type impurity in a SiGe substrate, the method comprising steps of:

forming an Si cap layer on the SiGe substrate;

forming a gate electrode on the Si cap layer;

forming sidewalls on sides of the gate electrode;

forming source and drain extension regions in an upper surface of the SiGe-based substrate; and

ion implanting an interstitial element into the source and drain extension regions to reduce vacancy concentration in the source and drain extension regions,

wherein the ion implanting occurs after the sidewalls are formed.

20. A method for reducing diffusion of an N type impurity in a SiGe substrate, the method comprising steps of:

forming an Si cap layer on the SiGe substrate;

forming a gate electrode on the Si cap layer;

forming sidewalls on sides of the gate electrode;

forming source and drain extension regions in an upper surface of the SiGe substrate; and

reducing a vacancy concentration in the source and drain extension regions using ion implantation in order to annihilate excess vacancies or trap vacancies,

wherein the reducing occurs after the sidewalls are formed and forms low-vacancy regions that substantially overlap the source and drain extension regions.