×

Defectivity and process control of electroless deposition in microelectronics applications

  • US 7,410,899 B2
  • Filed: 09/20/2005
  • Issued: 08/12/2008
  • Est. Priority Date: 09/20/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising:

  • contacting the substrate with an electroless deposition composition comprising (a) a grain refiner comprising a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M(n+2)PnO(3n+1) or (MPO3)n, where M represents a counter ion, and n=3 to 600; and

    (b) a source of deposition ions selected from the group consisting of Co ions and Ni ions.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×