MEMS device and fabrication method thereof

• US 7,411,261 B2
• Filed: 02/09/2004
• Issued: 08/12/2008
• Est. Priority Date: 03/11/2002
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Moon-chul, Song, In-sang, Lee, Eun-sung, Kim, Jong-seok, Kim, Chung-woo
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US10/773,312
• Publication Number:
  US 20040155306A1
• Time in Patent Office: 1,646 Days
• Field of Search: 257/234, 257252-254, 257414-420, 438/48, 438/50, 438/52, 438/53
• US Class Current: 257/415
• CPC Class Codes: B81B 2201/014 having a cantilever fixed on one side connected to one or more dimples
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 2203/0307 Anchors
• CPC Class Codes: B81B 2203/04 Electrodes
• CPC Class Codes: B81B 3/0078 Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
• CPC Class Codes: B81C 2201/0107 Sacrificial metal
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

Claims

1. A MEMS device, comprising:

a fixing part fixed to a substrate;

a driving part connected to the fixing part by a connecting part and floating over the substrate;

an electrode part for driving the driving part, the electrode part including an electrode and an insulation layer covering the electrode to electrically isolate the driving part and the electrode; and

contact parts selectively switchable with the driving part, wherein the electrode part and the contact parts are planarized on the substrate.

2. The MEMS device as claimed in claim 1, further comprising:

an anchor inserted between the fixing part and the substrate for fixing the fixing part on the substrate; and

sidewalls on at least a portion of side surfaces of the anchor.

3. The MEMS device as claimed in claim 2, wherein the sidewalls are substantially formed over the entire portion remaining except for a portion corresponding to the connection part connecting the fixing part and the driving part.

4. The MEMS device as claimed in claim 2, wherein the sidewalls, fixing part, and driving part are integrally formed in one body.

5. The MEMS device as claimed in claim 4, wherein the sidewalls are in contact with the substrate.

6. The MEMS device as claimed in claim 2, further comprising a support structure adjacent a sidewall and between the anchor and a contact part under the anchor.

7. The MEMS device as claimed in claim 6, wherein the support structure is at least one of aluminum, copper, oxide and nickel.

8. The MEMS device as claimed in claim 1, wherein a width of the connection part is narrower than that of the fixing part.

9. The MEMS device as claimed in claim 1, wherein the electrode is embedded in the insulation layer.

10. The MEMS device as claimed in claim 9, wherein the insulating layer is integral in a single layer.

11. The MEMS device as claimed in claim 9, wherein the insulating layer includes a first insulating layer around sides of the electrode part and a second insulating layer on top of the electrode part.