Dual plasma beam sources and method

• US 7,411,352 B2
• Filed: 04/19/2006
• Issued: 08/12/2008
• Est. Priority Date: 09/19/2002
• Status: Expired due to Fees

• Current Assignee: General Plasma, Inc. (BASF SE)
• Original Assignee: Applied Process Technology, Inc. (Italveco Srl)
• Inventors: Madocks, John E.
• Primary Examiner(s): Philogene; Haissa
• Application Number:
  US11/379,349
• Publication Number:
  US 20060177599A1
• Time in Patent Office: 846 Days
• Field of Search: 315/111.21, 315/111.41, 315/111.71, 315/111.91, 118/723.DC, 118/723.E, 118/723.ER, 118/723.ME, 118/723.MW, 118/723.MR, 204/192.12, 204/298.19, 20429836-29838
• US Class Current: 315/111.21
• CPC Class Codes: C23C 14/32 by explosion; by evaporation and subsequent ionisation of the vapours , e.g. ion-platingC23C14/34 - C23C14/48 take precedence
• CPC Class Codes: C23C 16/513 using plasma jets
• CPC Class Codes: H01J 37/3266 Magnetic control means
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.

Claims

1. Apparatus for generating a plasma, comprising in combination:

a) a first and a second plasma source, each including a discharge cavity having a first width;

a nozzle extending outwardly from said discharge cavity, said nozzle having a second width which is less than the first width;

at least one electrode within said discharge cavity; and

a plurality of magnets disposed adjacent said cavity for creating a magnetic field null region within said discharge cavity; and

b) an AC power source connected across the at least one electrode in each discharge cavity for energizing the electrodes alternatively as a cathode and an anode, each of said electrodes serving as a cathode electrode being capable of supporting at least one magnetron discharge region within the respective discharge cavity.

2. The apparatus as set forth in claim 1, wherein the ionizable gas inlet is located between the electrode and the nozzle within each discharge cavity.

3. The apparatus as set forth in claim 2, wherein a mirror magnetic field is disposed out of said nozzle of said first plasma source and out of said nozzle of said second plasma source.

4. The apparatus as set forth in claim 1, wherein a flow of electrons is impeded alternatively from said first plasma source and from said second plasma source, respectively, during a half cycle of said AC power source.

5. The apparatus as set forth in claim 1, further including a drive for transporting a substrate past said plasma sources whereby to effect uniform deposition on the substrate.

6. The apparatus as set forth in claim 1, further including a first pair of magnets facing one another disposed in said first plasma source and a second pair of magnets facing one another disposed in said second plasma source for creating a confinement region within each of the respective one of said first and second plasma sources.

7. The apparatus as set forth in claim 6, wherein said first pair of magnets exhibit a first polarity and said second pair of magnets exhibit a second polarity.

8. The apparatus of claim 1, further including a first pair of magnets aligned parallel to one another disposed in said first plasma source;

and a second pair of magnets aligned parallel to one another disposed in said second plasma source for creating a confinement region within each of the respective one of said first and second plasma sources.

9. The apparatus of claim 1, wherein the first and second plasma sources are located within a process chamber, and including an inlet for introducing a precursor gas into the process chamber external to the nozzles.

10. The apparatus of claim 9, wherein the precursor gas comprises a silicon containing gas.

11. The apparatus of claim 10, wherein the silicon containing gas comprises hexamethyldisiloxane.

12. The apparatus of claim 1, and including a second inlet, other than said nozzle for introducing a non-condensing gas into the discharge cavity of each plasma source.

13. The apparatus of claim 12, wherein the non-condensing gas comprises oxygen.

14. A method of plasma treating a substrate comprising the steps of:

a) providing a first and a second plasma source, each including a discharge cavity and an outlet for discharging a linear ion beam onto the substrate;

b) providing an AC power source across an electrode disposed in each discharge cavity and energizing the electrodes in the first and second plasma sources alternatively as a cathode and an anode, each electrode when serving as a cathode electrode being capable of supporting at least one magnetron discharge region within the discharge cavity;

c) establishing mirror magnetic fields out of the first and second plasma sources;

d) impeding a flow of electrons by the mirror magnetic field in the first plasma source when the electrode in the discharge cavity of the second plasma source serves as a cathode during a half cycle of the AC power source and impeding the flow of electrons by the mirror magnetic field in the second plasma source when the electrode in the discharge cavity of the first plasma source serves as a cathode during a half cycle of the AC power source;

e) introducing an ionizable gas into the discharge cavity of each of the first and second plasma sources;

f) ionizing at least some of the atoms of the ionizable gas encountering the impeded electrons; and

g) alternatively discharging ions from each nozzle in the form of an ion beam onto a substrate.

15. The method as set forth in claim 14, including the step of transporting the substrate past the ion beams.

16. The method as set forth in claim 14, wherein a first pair of magnets facing one another are disposed in the first plasma source and a second pair of magnets facing one another are disposed in the second plasma source, and including the step of creating a confinement region within each of the respective one of the first and second plasma sources with the first and second pairs of magnets.

17. The method as set forth in claim 16, wherein the first pair of magnets exhibits a first polarity and wherein the second pair of magnets exhibits a second polarity.

18. The method as set forth in claim 14, wherein the substrate comprises glass.

19. The method as set forth in claim 14, wherein a first pair of magnets aligned parallel to one another are disposed in the first plasma source and a second pair of magnets aligned parallel to one another are disposed in the second plasma source, and including the step of creating a confinement region within each of the respective first and second plasma sources with the first and second pairs of magnets.

20. The method as set forth in claim 14, wherein the substrate comprises a metal or a plastic.

21. The method of claim 14, and including the step h) of introducing a precursor gas within the process chamber external to the plasma sources.

22. The method of claim 14, and including the step of introducing a non-condensing gas into the discharge cavity of each of the first and second plasma sources.

23. The method of claim 22, wherein the non-condensing gas comprises oxygen.

24. The method of claim 21, wherein the precursor gas comprises a silicon containing gas.

25. The method of claim 24, wherein the silicon containing gas comprises hexamethyldisiloxane.

26. A method of generating a plasma, comprising the steps of:

a) providing a first and a second plasma source, each including a discharge cavity having an outlet for discharging a linear ion beam onto a substrate;

b) providing an AC power source across an electrode disposed in each discharge cavity and energizing the electrodes in the first and second plasma sources alternatively as a cathode and an anode, each electrode when serving as a cathode electrode being capable of supporting at least one magnetron discharge region within the discharge cavity;

c) establishing a mirror magnetic field out of the outlet of the first plasma source and out of the outlet of the second plasma source;

d) impeding a flow of electrons by the mirror magnetic field in the first plasma source when the electrode in the discharge cavity of the second plasma source serves as a cathode during a half cycle of the AC power source and impeding the flow of electrons by the mirror magnetic field in the second plasma source when the electrode in the discharge cavity of the first plasma source serves as a cathode during a half cycle of the AC power source;

e) introducing an ionizable gas into the discharge cavity of each of the first and second plasma sources;

f) ionizing at least some of the atoms of the ionizable gas encountering the impeded electrons; and

g) alternatively discharging the ions from each outlet in the form of an ion beam.

27. The method as set forth in claim 26, including the step of transporting a substrate past the ion beams.

28. The method as set forth in claim 26, wherein a first pair of magnets facing one another are disposed in the first plasma source and a second pair of magnets facing one another are disposed in the second plasma source, and including the step of creating a confinement region within each of the respective one of the first and second plasma sources with the first and second pairs of magnets.

29. The method as set forth in claim 26, wherein the first pair of magnets exhibit a first polarity and wherein the second pair of magnets exhibit a second polarity.

30. The method as set forth in claim 26, wherein a first pair of magnets aligned parallel to one another are disposed in the first plasma source and a second pair of magnets aligned parallel to one another are disposed in the second plasma source, and including the step of creating a confinement region within each of the respective first and second plasma sources with the first and second pairs of magnets.