Semiconductor integrated circuit device
First Claim
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1. A semiconductor integrated circuit device comprising:
- a semiconductor chip,a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, anda second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip,wherein a verify voltage for verifying a lower side of a threshold voltage is made variable when a specific data is programmed into each of the memory cells.
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Abstract
A semiconductor integrated circuit device has a first memory cell group including a plurality of rewritable nonvolatile memory cells arranged on a semiconductor chip and a second memory cell group including a plurality of rewritable nonvolatile memory cells arranged on the semiconductor chip. Setting of the write threshold voltage of the memory cell of the first memory cell group and setting of the write threshold voltage of the memory cell of the second memory cell group are variable.
26 Citations
27 Claims
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1. A semiconductor integrated circuit device comprising:
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a semiconductor chip, a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, and a second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, wherein a verify voltage for verifying a lower side of a threshold voltage is made variable when a specific data is programmed into each of the memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor integrated circuit device comprising:
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a semiconductor chip, a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, and a second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, wherein setting of write threshold voltages of the memory cells of the first memory cell group and setting of write threshold voltages of the memory cells of the second memory cell group are made variable, and wherein the write threshold voltage is made variable by making variable word line voltage at verify read time. - View Dependent Claims (19, 20, 21, 22)
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23. A semiconductor integrated circuit device comprising:
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a semiconductor chip, a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, and a second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, wherein setting of write threshold voltages of the memory cells of the first memory cell group and setting of write threshold voltages of the memory cells of the second memory cell group are made variable, and wherein word line voltage at read time of the first memory cell group and word line voltage at read time of the second memory cell group are made variable. - View Dependent Claims (24, 25, 26, 27)
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Specification