Method for controlled application of reactive vapors to produce thin films and coatings
First Claim
1. A method of vapor-phase coating deposition on a substrate present in a processing chamber, where at least one precursor used for formation of said coating exhibits a vapor pressure below about 150 Torr at a temperature of 25°
- C., the method comprising;
a) providing a processing chamber in which said coating is vapor deposited;
b) providing at least one precursor exhibiting a vapor pressure below about 150 Torr at a temperature of 25°
C.;
c) transferring vapor of said at least one precursor to a corresponding precursor vapor reservoir in which said precursor vapor accumulates;
d) accumulating a precise nominal amount of said at least one precursor vapor required for vapor phase coating deposition in at least one precursor vapor reservoir which corresponds with said at least one precursor, wherein said precise nominal amount of said precursor is accumulated by controlling a pressure at a specific temperature in said precursor vapor reservoir which corresponds with said precursor; and
e) adding said precise nominal amount of said at least one precursor vapor to said processing chamber in which said coating is being deposited, wherein the entire said precise nominal amount of said at least one precursor vapor is transferred in batch fashion into said processing chamber.
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Abstract
A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.
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Citations
21 Claims
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1. A method of vapor-phase coating deposition on a substrate present in a processing chamber, where at least one precursor used for formation of said coating exhibits a vapor pressure below about 150 Torr at a temperature of 25°
- C., the method comprising;
a) providing a processing chamber in which said coating is vapor deposited; b) providing at least one precursor exhibiting a vapor pressure below about 150 Torr at a temperature of 25°
C.;c) transferring vapor of said at least one precursor to a corresponding precursor vapor reservoir in which said precursor vapor accumulates; d) accumulating a precise nominal amount of said at least one precursor vapor required for vapor phase coating deposition in at least one precursor vapor reservoir which corresponds with said at least one precursor, wherein said precise nominal amount of said precursor is accumulated by controlling a pressure at a specific temperature in said precursor vapor reservoir which corresponds with said precursor; and e) adding said precise nominal amount of said at least one precursor vapor to said processing chamber in which said coating is being deposited, wherein the entire said precise nominal amount of said at least one precursor vapor is transferred in batch fashion into said processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
- C., the method comprising;
Specification