Method of depositing a metal-containing film
First Claim
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1. A method of depositing a metal-containing film on a substrate comprising the steps of:
- a) conveying one or more organometallic compounds of formula I in a gaseous phase to a deposition chamber containing a substrate,
wherein M is Ge;
R1 and R2 are independently chosen from H, alkyl, alkenyl, alkynyl and aryl;
each R3 is independently chosen from n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, pentyl, cyclopentyl, hexyl, cyclohexyl, alkenyl, alkynyl and aryl, provided that none of R3 is cyclopentadienyl;
each R4 is independently chosen from (C3-C12)alkyl;
X is halogen;
a=0-3;
b=0-3;
c=0-3;
d=0-2;
e=0-4; and
a+b+c+d+e=4;
wherein B3≠
R4;
wherein the sums of a+b and a+d are each ≦
3;
b) decomposing the one or more organometallic compounds in the deposition chamber; and
c) depositing a metal-containing film comprising germanium on the substrate.
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Abstract
A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
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Citations
11 Claims
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1. A method of depositing a metal-containing film on a substrate comprising the steps of:
- a) conveying one or more organometallic compounds of formula I in a gaseous phase to a deposition chamber containing a substrate,
wherein M is Ge;
R1 and R2 are independently chosen from H, alkyl, alkenyl, alkynyl and aryl;
each R3 is independently chosen from n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, pentyl, cyclopentyl, hexyl, cyclohexyl, alkenyl, alkynyl and aryl, provided that none of R3 is cyclopentadienyl;
each R4 is independently chosen from (C3-C12)alkyl;
X is halogen;
a=0-3;
b=0-3;
c=0-3;
d=0-2;
e=0-4; and
a+b+c+d+e=4;
wherein B3≠
R4;
wherein the sums of a+b and a+d are each ≦
3;
b) decomposing the one or more organometallic compounds in the deposition chamber; and
c) depositing a metal-containing film comprising germanium on the substrate.- View Dependent Claims (2, 3, 4, 5)
- a) conveying one or more organometallic compounds of formula I in a gaseous phase to a deposition chamber containing a substrate,
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6. A method of depositing a germanium-containing film on a substrate comprising the steps of:
- a) conveying one or more organometallic compounds of formula IIA or IIB;
wherein R1 and R2 are independently chosen from alkyl, alkenyl, alkynyl or aryl;
each R3 is independently chosen from (C1-C12)alkyl, alkenyl, alkynyl and aryl;
each R4 is independently chosen from branched and cyclic (C3-C5)alkyl;
each R5 is independently chosen from (C1-C12)alkyl, alkenyl, alkynyl and aryl;
X is halogen;
a′
=0-3;
b′
=0-2;
c′
=1-3;
d′
=0-3;
a′
+b′
+c′
+d′
=4;
a″
=0-2;
b″
=0-2;
e″
=1-2;
f″
=0-2;
a″
+b″
+e″
+f″
=4;
wherein at least two of a″
, b″
and f″
≠
0;
provided that R5≠
CH3 when a″
=1, e″
=1, f″
=2, and R4=(CH3)C; and
provided that R3 is branched or cyclic (C3-C5)alkyl when c′
+d′
=4, in a gaseous phase to a deposition chamber containing a substrate;
b) decomposing the organometallic compound in the deposition chamber; and
c) depositing a germanium-containing film on the substrate.
- a) conveying one or more organometallic compounds of formula IIA or IIB;
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7. A method of depositing a metal-containing film comprising the steps of:
- a) providing a substrate;
b) disposing the substrate in a deposition chamber;
c) conveying one or more organometallic compounds in a gaseous phase to the deposition chamber, wherein one organometallic compound is iso-butylgermane; and
d) depositing a metal-containing film on the substrate, wherein the metal-containing film comprises germanium. - View Dependent Claims (8, 9)
- a) providing a substrate;
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10. A method of depositing a multi-layer structure on a substrate comprising the steps of:
- a) providing a substrate;
b) disposing the substrate in a deposition chamber;
c) conveying iso-butylgermane in a gaseous phase to the deposition chamber;
d) decomposing the iso-butylgermane to form a germanium-containing film on the substrate;
e) conveying a silicon precursor chosen from one or more of silane and dichlorosilane in a gaseous phase to the deposition chamber;
f) decomposing the silicon precursor; and
g) depositing a silicon-containing film substrate. - View Dependent Claims (11)
- a) providing a substrate;
Specification
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Current AssigneeRohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
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Original AssigneeRohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
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InventorsShenai-Khatkhate, Deodatta Vinayak, Power, Michael Brendan
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Primary Examiner(s)CHEN, BRET P
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Application NumberUS10/817,618Publication NumberTime in Patent Office1,600 DaysField of Search427/250, 427/255.28, 427/255.35, 427/255.39US Class Current427/255.28CPC Class CodesC07C 391/00 Compounds containing seleniumC07C 395/00 Compounds containing telluriumC07F 7/0807 comprising Si as a ring atomC07F 7/0827 Syntheses with formation of...C07F 7/30 Germanium compoundsC23C 16/18 from metallo-organic compoundsC23C 16/28 Deposition of only one othe...
