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Method of making a light emitting diode

  • US 7,413,918 B2
  • Filed: 01/11/2005
  • Issued: 08/19/2008
  • Est. Priority Date: 01/11/2005
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor light-emitting diode (LED) device, comprising:

  • forming a multi-layer epitaxial structure of the LED device that includes;

    an n-doped layer;

    an active layer adjacent the n-doped layer;

    a p-doped layer adjacent the active layer, wherein the n-doped layer is at least about four times thicker than the p-doped layer; and

    a metal substrate adjacent the p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride;

    providing a plurality of balls on a surface of the n-doped layer of the LED device; and

    roughening the surface of the n-doped layer to scatter and extract light from interior for emission out of the n-doped layer;

    depositing an optically transparent and electrically conductive contact layer above the plurality of balls, whereby a bias applied across the p-doped layer and the n-doped layer generates light that is emitted through the n-doped layer, scattered by the plurality of balls, and emitted to the ambient via the contact layer.

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