Method of making a light emitting diode
First Claim
Patent Images
1. A method of fabricating a semiconductor light-emitting diode (LED) device, comprising:
- forming a multi-layer epitaxial structure of the LED device that includes;
an n-doped layer;
an active layer adjacent the n-doped layer;
a p-doped layer adjacent the active layer, wherein the n-doped layer is at least about four times thicker than the p-doped layer; and
a metal substrate adjacent the p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride;
providing a plurality of balls on a surface of the n-doped layer of the LED device; and
roughening the surface of the n-doped layer to scatter and extract light from interior for emission out of the n-doped layer;
depositing an optically transparent and electrically conductive contact layer above the plurality of balls, whereby a bias applied across the p-doped layer and the n-doped layer generates light that is emitted through the n-doped layer, scattered by the plurality of balls, and emitted to the ambient via the contact layer.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
-
Citations
37 Claims
-
1. A method of fabricating a semiconductor light-emitting diode (LED) device, comprising:
-
forming a multi-layer epitaxial structure of the LED device that includes; an n-doped layer; an active layer adjacent the n-doped layer; a p-doped layer adjacent the active layer, wherein the n-doped layer is at least about four times thicker than the p-doped layer; and a metal substrate adjacent the p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride; providing a plurality of balls on a surface of the n-doped layer of the LED device; and roughening the surface of the n-doped layer to scatter and extract light from interior for emission out of the n-doped layer; depositing an optically transparent and electrically conductive contact layer above the plurality of balls, whereby a bias applied across the p-doped layer and the n-doped layer generates light that is emitted through the n-doped layer, scattered by the plurality of balls, and emitted to the ambient via the contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
-
-
29. A method comprising:
-
forming a vertical light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride and the n-doped layer is at least about four times thicker than the p-doped layer; forming a conductive substrate such that the p-doped layer is between the active layer and the conductive substrate; securing a plurality of balls for light extraction on a surface of the n-doped layer of the VLED device by forming an optically transparent and electrically conductive contact layer above the plurality of balls, whereby biasing the p-doped layer and n-doped layer causes the emission of light substantially through the n-doped layer to the ambient via the contact layer; and roughening the surface of the n-doped layer. - View Dependent Claims (30, 31, 32, 33, 34, 35)
-
-
36. A method comprising:
-
forming, for a vertical light-emitting diode (VLED) device, a multiple quantum well (MQW) active layer between an n-doped layer and a p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride and the n-doped layer is at least about four times thicker than the p-doped layer; forming a conductive substrate such that the p-doped layer is between the active layer and the conductive substrate; securing a plurality of balls for light extraction to the n-doped layer; roughening the surface of the n-doped layer; depositing an optically transparent and electrically conductive contact layer above the plurality of balls; and forming opposing electrodes in electrical communication, respectively, with the n-doped layer and the p-doped layer, whereby a bias applied across the p-doped layer and the n-doped layer causes holes and electrons to be injected into the active layer so as to recombine and generate light that is emitted to the ambient via the contact layer after passing through the n-doped layer and being scattered by the plurality of balls. - View Dependent Claims (37)
-
Specification