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Trench transistor and method for fabricating a trench transistor

  • US 7,414,286 B2
  • Filed: 08/31/2006
  • Issued: 08/19/2008
  • Est. Priority Date: 08/31/2005
  • Status: Expired due to Fees
First Claim
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1. A trench transistor, having a semiconductor body, comprising:

  • a trench structure; and

    an electrode structure embedded in the trench structure;

    wherein the electrode structure is electrically insulated from the semiconductor body by an insulation structure and has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter;

    wherein there is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure; and

    wherein the sum of the internal resistances of the shielding electrode and the current/voltage supply of the shielding electrode is less than corresponding internal resistance sums for the gate electrode structure and the field electrode structure.

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