Trench transistor and method for fabricating a trench transistor
First Claim
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1. A trench transistor, having a semiconductor body, comprising:
- a trench structure; and
an electrode structure embedded in the trench structure;
wherein the electrode structure is electrically insulated from the semiconductor body by an insulation structure and has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter;
wherein there is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure; and
wherein the sum of the internal resistances of the shielding electrode and the current/voltage supply of the shielding electrode is less than corresponding internal resistance sums for the gate electrode structure and the field electrode structure.
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Abstract
A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure.
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Citations
15 Claims
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1. A trench transistor, having a semiconductor body, comprising:
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a trench structure; and an electrode structure embedded in the trench structure; wherein the electrode structure is electrically insulated from the semiconductor body by an insulation structure and has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter; wherein there is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure; and wherein the sum of the internal resistances of the shielding electrode and the current/voltage supply of the shielding electrode is less than corresponding internal resistance sums for the gate electrode structure and the field electrode structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A trench transistor, having a semiconductor body, comprising:
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a trench structure; an electrode structure embedded in the trench structure; the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter; and there being provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure, wherein the sum of the internal resistances of the shielding structure and of the current and/or voltage supply thereof is less than the sum of the internal resistances of the gate electrode structure and of the current and/or voltage supply thereof and/or is less than the sum of the internal resistances of the field electrode structure and of the current and/or voltage supply thereof.
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11. A semiconductor device comprising:
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a semiconductor body; a trench structure in the semiconductor body; an electrode structure in the trench structure; insulation means for insulating the electrode structure from the semiconductor body; a field electrode structure below the electrode structure and insulated therefrom; means for reducing capacitive coupling between the gate and field electrode structures; and a shielding electrode, wherein the sum of the internal resistances of the shielding electrode and the current/voltage supply of the shielding electrode is less than corresponding internal resistance sums for the electrode structure and the field electrode structure. - View Dependent Claims (12, 13, 14, 15)
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Specification