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In-situ metrology system and method for monitoring metalization and other thin film formation

  • US 7,414,721 B1
  • Filed: 12/23/2002
  • Issued: 08/19/2008
  • Est. Priority Date: 12/23/2002
  • Status: Expired due to Term
First Claim
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1. A thin film processing system for a wafer comprising:

  • a processing area including a deposition system, a thermal processing system and a wet bench area operative to perform a thin film formation process including thin film deposition on a wafer; and

    a spectroscopic ellipsometer disposed in said processing area and operative to perform in situ metrological measurement of at least one aspect of the thin film formation process wherein at least one of composition, quality and thickness of a formed thin film is obtained.

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