Method of forming metal layer used in the fabrication of semiconductor device

• US 7,416,981 B2
• Filed: 10/05/2005
• Issued: 08/26/2008
• Est. Priority Date: 10/14/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Hyun-Young, Moon, Kwang-Jin, Lee, Hyun-Suk
• Primary Examiner(s): Le; Thao X.
• Assistant Examiner(s): Kim; Sun M
• Application Number:
  US11/245,366
• Publication Number:
  US 20060084263A1
• Time in Patent Office: 1,056 Days
• Field of Search: 438/197, 438/151, 438/142, 438/149, 438 14- 18, 438299-303, 438305-306, 438/510, 438/514, 438/530, 438/680, 438/683, 438/685
• US Class Current: 438/685
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations

Abstract

A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.

Claims

1. A method of forming a metal layer comprising:

using a plasma enhanced chemical vapor deposition (PECVD) method, concurrently supplying in the presence of an exposed conductive layer on a semiconductor substrate a purge gas and a mixture gas including a hydrogen gas and a metal chloride compound gas for a predetermined time to form a first metal layer on the semiconductor substrate; and

subsequently supplying the hydrogen gas and the metal chloride compound gas alternately for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method.

2. The method according to claim 1, wherein the hydrogen gas and the metal chloride compound gas are supplied at flow rates of 2000 sccm and 3 to 5 sccm respectively, and the purge gas is supplied at a flow rate of 300 sccm in the formation of the first metal layer.

3. The method according to claim 2, wherein the first metal layer is formed with a thickness of about 30 Å

by supplying the mixture gas and the purge gas for about 5 to 6 seconds.

4. The method according to claim 1, when the hydrogen gas and the metal chloride compound gas are alternately supplied into the chamber during the formation of the second metal layer, the method further comprising supplying only the purge gas for a predetermined purge time between the supplying of the hydrogen gas and the supplying of the metal chloride compound gas.

5. The method according to claim 4, wherein the predetermined purge time is about 10 to 20 seconds.

6. The method according to claim 1, wherein the metal chloride compound gas, which is supplied into the chamber alternately with the hydrogen gas during the formation of the second metal layer, is supplied at a flow rate of about 3 to 5 sccm for about 10 to 20 seconds.

7. The method according to claim 1, wherein the hydrogen gas, which is supplied into the chamber alternately with the metal chloride compound gas during the formation of the second metal layer, is supplied at a flow rate of about 2000 sccm for about 10 to 20 seconds.

8. The method according to claim 1, further including applying a temperature of 450°

C. within the chamber during formation of the first metal layer and the second metal layer.

9. The method according to claim 1, further including applying 200 W of plasma reaction energy to the purge gas, the hydrogen gas, and the metal chloride compound gas inside the chamber during the concurrently supplying step.

10. A method of fabricating a semiconductor device comprising:

forming a silicon conductive layer selectively exposed by an interlayer insulating layer electrically insulating a semiconductor substrate having plural elements formed thereon;

supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space concurrently for a predetermined time, thereby forming a first metal layer on the conductive layer, using a PECVD method; and

supplying the hydrogen gas and the metal chloride compound gas alternately for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method.

11. The method according to claim 10, wherein the hydrogen gas and the metal chloride compound gas are supplied at flow rates of 2000 sccm and 3 to 5 sccm respectively, and the purge gas is supplied at a flow rate of 300 sccm in the formation of the first metal layer.

12. The method according to claim 10, wherein the first metal layer is formed with a thickness of about 30 Å

by supplying the mixture gas and the purge gas into the chamber for about 5 to 6 seconds.

13. The method according to claim 10, when the hydrogen gas and the metal chloride compound gas are alternately supplied into the chamber during the formation of the second metal layer, the method further comprising supplying only the purge gas for a predetermined purge time between the supplying of the hydrogen gas and the supplying of the metal chloride compound gas.

14. The method according to claim 13, wherein the purge time is about 10 to 20 seconds.

15. The method according to claim 10, wherein the metal chloride compound gas, which is supplied into the chamber with the hydrogen gas during the formation of the second metal layer, is supplied at a flow rate of about 3 to 5 sccm for about 10 to 20 seconds.

16. The method according to claim 10, wherein the hydrogen gas, which is supplied into the chamber alternately with the metal chloride compound gas during the formation of the second metal layer, is supplied at a flow rate of about 2000 sccm for about 10 to 20 seconds.

17. The method according to claim 10, wherein the first metal layer and the second metal layer are formed inside the chamber, an inner temperature of which is 450°

C.

18. The method according to claim 10, wherein the first metal layer and the second metal layer are formed by applying 200 W of plasma reaction energy to the purge gas, the hydrogen gas, and the metal chloride compound gas inside the chamber.