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Method of forming metal layer used in the fabrication of semiconductor device

  • US 7,416,981 B2
  • Filed: 10/05/2005
  • Issued: 08/26/2008
  • Est. Priority Date: 10/14/2004
  • Status: Active Grant
First Claim
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1. A method of forming a metal layer comprising:

  • using a plasma enhanced chemical vapor deposition (PECVD) method, concurrently supplying in the presence of an exposed conductive layer on a semiconductor substrate a purge gas and a mixture gas including a hydrogen gas and a metal chloride compound gas for a predetermined time to form a first metal layer on the semiconductor substrate; and

    subsequently supplying the hydrogen gas and the metal chloride compound gas alternately for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method.

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