Transparent electrode
First Claim
1. A light emitting device comprising:
- a semiconductor layer formed on a substrate of a semiconductor device;
a ZnO transparent electrode formed on the semiconductor layer; and
an Mg-doped ZnO film disposed on a light emission side of an outer surface of the ZnO transparent electrode that is opposite to the substrate,wherein the semiconductor layer comprises an n-type GaN system semiconductor layer formed on the substrate, an emission layer formed on the n-type GaN system semiconductor layer, and a p-type GaN system semiconductor layer formed on the emission layer.
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Accused Products
Abstract
In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.
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Citations
1 Claim
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1. A light emitting device comprising:
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a semiconductor layer formed on a substrate of a semiconductor device; a ZnO transparent electrode formed on the semiconductor layer; and an Mg-doped ZnO film disposed on a light emission side of an outer surface of the ZnO transparent electrode that is opposite to the substrate, wherein the semiconductor layer comprises an n-type GaN system semiconductor layer formed on the substrate, an emission layer formed on the n-type GaN system semiconductor layer, and a p-type GaN system semiconductor layer formed on the emission layer.
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Specification
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- Resources
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Current AssigneeROHM Co., Ltd.
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Original AssigneeROHM Co., Ltd.
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InventorsNakahara, Ken
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Primary Examiner(s)Mondt; Johannes P
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Application NumberUS10/748,734Publication NumberTime in Patent Office1,701 DaysField of Search257 79-103, 372 43- 50, 349 42- 53US Class Current257/99CPC Class CodesH01L 33/42 Transparent materials
