Method on manufacturing spin valve film

• US 7,418,777 B2
• Filed: 05/05/2005
• Issued: 09/02/2008
• Est. Priority Date: 03/29/2000
• Status: Expired due to Fees

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Sasaki, Tetsuro, Amano, Hajime, Sato, Jun-ichi, Takezutsumi, Hiroaki
• Primary Examiner(s): Kim; Paul D
• Application Number:
  US11/121,929
• Publication Number:
  US 20050231857A1
• Time in Patent Office: 1,216 Days
• Field of Search: 296/030.7, 296/030.9, 296/031.3, 296/031.4, 360/324.1, 360/324.11, 360/324.12, 204/192.15, 427127-131
• US Class Current: 29/603.14
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G11B 5/3166 Testing or indicating in relation thereto, e.g. before the fabrication is completed
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49036 including measuring or testing
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers

Abstract

A method of manufacturing a spin valve film, produces a large read out signal. After a completion of a film making process for forming a previous film of two films to be formed successively, but before an initiation of a film making process for forming a succeeding film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film is introduced by interrupting a film making process. This step may be performed by keeping a substrate within a sputtering vacuum chamber. The interruption can be shortened by exposing the substrate to a plasma, transferring the substrate in a separate vacuum chamber is lower or whose H₂O or O₂ concentration is higher than that in the sputtering vacuum chamber, conducting a surface treatment with a gas containing H₂O or O₂, or flowing a process gas.

Claims

1. A method of manufacturing a spin valve film comprising the steps of:

forming an undercoat film on a substrate;

forming, on the undercoat film, a first ferromagnetic film serving as a free layer;

forming an electrically conductive film on the first ferromagnetic film;

forming, on the electrically conductive film, a second ferromagnetic film serving as a pinned layer; and

forming an antiferromagnetic film on the second ferromagnetic film,

wherein the spin valve film includes the undercoat film, the first ferromagnetic film, the electrically conductive film, and the second ferromagnetic film; and

wherein during a film making process for forming the spin valve film, and after a completion of a first forming process for forming a first film of two films which are selected from the undercoat film, the first ferromagnetic film, the electrically conductive film, and the second ferromagnetic film and which are to be formed successively, but before an initiation of a second forming process for forming a second film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film is initiated by interrupting the film making process is introduced.

2. The method of manufacturing a spin valve film according to claim 1, wherein the films constituting the spin valve film are formed by sputtering, molecular beam epitaxy or vapor deposition while the substrate is set in a film forming vacuum chamber.

3. The method of manufacturing a spin valve film according to claim 2, wherein after finishing the first forming process, the step of decreasing an anisotropic magnetic field of the spin valve film by interrupting a film making process is carried out while the substrate is kept in the film forming vacuum chamber.

4. The method of manufacturing a spin valve film according to claim 3, wherein after finishing the first film forming process, the step of decreasing an anisotropic magnetic field is performed by exposing the substrate to plasma which does not accompany a film formation.

5. The method of manufacturing a spin valve film according to claim 3, wherein after finishing the first film forming process, the step of decreasing an anisotropic magnetic field is conducted by flowing a process gas.

6. The method of manufacturing a spin valve film according to claim 3, wherein after finishing the first film forming process, the step of decreasing an anisotropic magnetic field is conducted by a surface treatment with a gas containing H₂O or O₂ by a concentration not less than 1 ppm.

7. The method of manufacturing a spin valve film according to claim 2, wherein after finishing the first film forming process within the film forming vacuum chamber, the substrate is transferred into a separate vacuum chamber and the step of decreasing an anisotropic magnetic field by interrupting the film making process is performed, and then the substrate is returned into the film forming vacuum chamber and the second film forming process is performed.

8. The method of manufacturing a spin valve film according to claim 7, wherein after finishing the first film forming process, the substrate is transferred into the separate vacuum chamber and the step of reducing an anisotropic magnetic field is carried out by exposing the substrate to a plasma which does not accompany film formation.

9. The method of manufacturing a spin valve film according to claim 7, wherein after finishing the first film forming process, the substrate is transferred into the separate vacuum chamber, and the step of decreasing an anisotropic magnetic field is conducted by flowing a process gas.

10. The method of manufacturing a spin valve film according to claim 7, wherein after finishing the first film forming process, the step of decreasing an anisotropic magnetic field is performed by transferring the substrate into the separate vacuum chamber whose degree of vacuum is lower than that of the film forming vacuum chamber.

11. The method of manufacturing a spin valve film according to claim 7, wherein after finishing the first film forming process, the step of decreasing an anisotropic magnetic field is conducted by transferring the substrate into the separate vacuum chamber having higher H₂O or O₂ concentration than the film forming vacuum chamber.

12. The method of manufacturing a spin valve film according to claim 7, wherein after finishing the first film forming step, the substrate is transferred into the vacuum chamber, and the step decreasing an anisotropic magnetic field is carried out by subjecting the substrate to a surface treatment with a gas contaning H₂O or O₂ with a concentration not less than 1 rpm.

13. A method of manufacturing a thin film magnetic head including a step of forming a magnetoresistive type reading element having a spin valve film before or after forming an inductive type writing element such that the writing element is supported by a substrate, and the step of forming the magnetoresistive type reading element having the spin valve layer comprising:

forming an undercoat film on the substrate;

forming, on the undercoat film, a first ferromagnetic film serving as a free layer;

forming an electrically conductive film on the ferromagnetic film;

forming, on the conductive film, a second ferromagnetic film serving as a pinned layer; and

forming an antiferromagnetic film on the ferromagnetic film,

wherein the spin valve film includes the undercoat film, the first ferromagnetic film, the electrically conductive film, and the second ferromagnetic film; and

wherein during a film making process for forming the spin valve film, and after a completion of a first forming process for forming a first film of two films which are selected from the undercoat film, the first ferromagnetic film, the electrically conductive film, and the second ferromagnetic film and which are to be formed successively, but before an initiation of a second forming process for forming a second film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film is initiated by interrupting a the film making process is introduced.