×

Nitride based LED with a p-type injection region

  • US 7,420,218 B2
  • Filed: 03/16/2005
  • Issued: 09/02/2008
  • Est. Priority Date: 03/18/2004
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor light emitting device, comprising:

  • a semiconductor multilayer structure composed of a p-semiconductor layer, a quantum well emission layer, and an n-semiconductor layer each made of a nitride semiconductor and laminated in the stated order, light from the emission layer exiting through the n-semiconductor layer; and

    a p-electrode facing and in electrical connection with the p-semiconductor layer, whereinthe p-semiconductor layer has, on a surface facing toward the p-electrode, (i) high-defect of dislocation-density regions in which defects of dislocation are localized and (ii) low-defect of dislocation-density regions, the high and low-defect of dislocation-density regions being at regularly or selectively distributed locations,the p-electrode has, on a surface facing toward the p-semiconductor layer, a plurality of projections or depressions that are distributed substantially uniformly, andthe p-electrode is directly in contact, at a top surface thereof, with the low-defect of dislocation-density regions of the p-semiconductor layer.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×