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Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device

  • US 7,420,221 B2
  • Filed: 09/01/2005
  • Issued: 09/02/2008
  • Est. Priority Date: 09/17/2004
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device, comprising:

  • a semiconductor multilayer film in which a first conductivity type layer, a light-emitting layer and a second conductivity type layer are laminated in this stated order, the second conductivity type layer being disposed on an extraction side of light emitted from the light-emitting layer;

    a first electrode contacting with the first conductivity type layer;

    a second electrode contacting with the second conductivity type layer;

    a substrate disposed on a side of the first conductivity type layer of the semiconductor multilayer film and supporting the semiconductor multilayer film;

    first and second terminals formed on a rear face with respect to a principal surface of the substrate on a side of the semiconductor multilayer film;

    a first conductive member that electrically connects the first electrode with the first terminal;

    a second conductive member that electrically connects the second electrode with the second terminal; and

    a phosphor layer formed on the substrate so as to cover the semiconductor multilayer film, the phosphor layer absorbing the light emitted from the light-emitting layer so as to emit fluorescence,wherein the first electrode is formed contacting with a principal surface of the first conductivity type layer, andthe phosphor layer is formed contacting with a principal surface of the second conductivity type layer.

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