Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device

• US 7,420,221 B2
• Filed: 09/01/2005
• Issued: 09/02/2008
• Est. Priority Date: 09/17/2004
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nagai, Hideo
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US11/570,114
• Publication Number:
  US 20070176193A1
• Time in Patent Office: 1,097 Days
• Field of Search: 257/95, 257/98, 257/99, 257/100, 257/E33.061, 438/27
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light-emitting device includes: a semiconductor multilayer film, a substrate supporting the semiconductor multilayer film; and a phosphor layer formed on the substrate so as to cover the semiconductor multilayer film. The phosphor layer has an outer edge of a cross section taken in a direction parallel to the principal surface of the substrate having a substantially circular shape or a substantially regular polygonal shape having five or more sides. An outer edge of the principal surface of the substrate is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides. With this configuration, light obtained therefrom has less non-uniformity in color and a high luminous flux can be realized.

Claims

1. A semiconductor light-emitting device, comprising:

a semiconductor multilayer film in which a first conductivity type layer, a light-emitting layer and a second conductivity type layer are laminated in this stated order, the second conductivity type layer being disposed on an extraction side of light emitted from the light-emitting layer;

a first electrode contacting with the first conductivity type layer;

a second electrode contacting with the second conductivity type layer;

a substrate disposed on a side of the first conductivity type layer of the semiconductor multilayer film and supporting the semiconductor multilayer film;

first and second terminals formed on a rear face with respect to a principal surface of the substrate on a side of the semiconductor multilayer film;

a first conductive member that electrically connects the first electrode with the first terminal;

a second conductive member that electrically connects the second electrode with the second terminal; and

a phosphor layer formed on the substrate so as to cover the semiconductor multilayer film, the phosphor layer absorbing the light emitted from the light-emitting layer so as to emit fluorescence,

wherein the first electrode is formed contacting with a principal surface of the first conductivity type layer, and

the phosphor layer is formed contacting with a principal surface of the second conductivity type layer.

2. The semiconductor light-emitting device according to claim 1, wherein an outer edge of the principal surface of the substrate is formed in a substantially regular hexagonal shape.

3. The semiconductor light-emitting device according to claim 1, wherein the phosphor layer has an outer edge of a cross section taken in a direction parallel to the principal surface of the substrate, the outer edge having a substantially circular shape or a substantially regular polygonal shape having five or more sides, and

an outer edge of the principal surface of the substrate is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides.

4. The semiconductor light-emitting device according to claim 1, wherein the phosphor layer is formed in a substantially truncated cone shape or a substantially hemispherical shape.

5. The semiconductor light-emitting device according to claim 1, wherein an outermost edge of the semiconductor multilayer film is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides.

6. The semiconductor light-emitting device according to claim 1, wherein the first and the second conductive members comprise via conductors formed in via holes provided in the substrate.

7. The semiconductor light-emitting device according to claim 1, wherein the first and the second conductive members have conductive patterns comprising a material capable of reflecting light, and

the conductive patterns are formed on a substantially entire surface of the principal surface of the substrate on the semiconductor multilayer film side.

8. A lighting module, comprising:

the semiconductor light-emitting device according to claim 1, and

a mounting board for mounting the semiconductor light-emitting device.

9. A lighting device comprising the lighting module according to claim 8 as a light source.

10. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:

forming a semiconductor multilayer film on one principal surface of a single crystal substrate so that the semiconductor multilayer film comprises a first conductivity type layer, a light-emitting layer and a second conductivity type layer in order of increasing proximity to the single crystal substrate, the second conductivity type layer being disposed on an extraction side of light emitted from the light-emitting layer;

forming first and second electrodes contacting with the first and the second conductivity type layers, respectively;

providing via holes in a substrate and then forming via conductors in the via holes;

forming conductive patterns on one principal surface of the substrate so as to electrically connect with the via conductors;

forming first and second terminals on a rear face of the substrate with respect to the principal surface so as to electrically connect with the conductive patterns through the via conductors;

electrically connecting the first electrode with the first terminal through one of the conductive patterns and one of the via conductors, and electrically connecting the second electrode with the second terminal through another conductive pattern and another via conductor;

forming on the substrate a phosphor layer absorbing the light emitted from the light-emitting layer to emit fluorescence so as to cover the semiconductor multilayer film and so that an outer edge of a cross section of the phosphor layer taken in a direction parallel to the principal surface of the substrate on the semiconductor multilayer film side has a substantially circular shape or a substantially regular polygonal shape having five or more sides; and

cutting the substrate into a substantially circular shape or a substantially regular polygonal shape having five or more sides so as to surround a region of the substrate on which the phosphor layer is formed.

11. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:

forming a semiconductor multilayer film on one principal surface of a single crystal substrate so that the semiconductor multilayer film comprises a first conductivity type layer, a light-emitting layer and a second conductivity type layer in order of increasing proximity to the single crystal substrate, the second conductivity type layer being disposed on an extraction side of light emitted from the light-emitting layer;

forming a first electrode contacting with a principal surface of the first conductivity type layer;

aside from the above steps, providing via holes in a substrate and then forming via conductors in the via holes;

forming a conductive pattern on one principal surface of the substrate so as to electrically connect with one of the via conductors;

forming a metal layer on the conductive pattern;

bonding the first electrode and the metal layer so as to form a laminate in which the semiconductor multilayer film is sandwiched between the single crystal substrate and the substrate;

detaching the single crystal substrate from the semiconductor multilayer film;

forming a second electrode that electrically connects the second conductivity type layer with another via conductor;

forming on a rear face of the substrate with respect to the principal surface a first terminal that electrically connects with the conductive pattern trough the corresponding via conductor and a second terminal that electrically connects with the second electrode through the corresponding via conductor;

forming on the substrate a phosphor layer absorbing the light emitted from the light-emitting layer to emit fluorescence so that the phosphor layer contacts with a principal surface of the second conductivity type layer and covers the semiconductor multilayer film and so that an outer edge of a cross section of the phosphor layer taken in a direction parallel to the principal surface of the substrate on the semiconductor multilayer film side has a substantially circular shape or a substantially regular polygonal shape having five or more sides; and

cutting the substrate into a substantially circular shape or a substantially regular polygonal shape having five or more sides that surrounds a region of the substrate on which the phosphor layer is formed.

12. The method for manufacturing a semiconductor light-emitting device according to claim 11, wherein during the step of detaching the single crystal substrate from the semiconductor multilayer film, a laser beam is applied thereto from a side of the single crystal substrate so as to decrease a bonding force at an interface between the single crystal substrate and the semiconductor multilayer film so that the single crystal substrate can be detached from the semiconductor multilayer film.