Carbon containing silicon oxide film having high ashing tolerance and adhesion

• US 7,420,279 B2
• Filed: 06/28/2006
• Issued: 09/02/2008
• Est. Priority Date: 01/29/2003
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Morita, Noboru, Usami, Tatsuya, Ohnishi, Sadayuki, Sasaki, Youichi, Kitao, Ryouhei, Arita, Kouji, Ohto, Kouichi
• Primary Examiner(s): Huynh; Andy
• Application Number:
  US11/477,011
• Publication Number:
  US 20060255466A1
• Time in Patent Office: 797 Days
• Field of Search: 257/758, 257/759, 257/E21.277, 257/E21.261
• US Class Current: 257/758
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

Claims

1. A semiconductor device having an interlayer insulating film formed on or over a semiconductor substrate, a wiring trench formed in the interlayer insulating film, an opening which is formed in the interlayer insulating film and which reaches a lower layer metal wiring conductor from the bottom portion of the wiring trench, and a metal wiring conductor and metal plug which are formed by filling the wiring trench and the opening with Cu containing metal via a baffler metal, wherein the interlayer insulating film includes an insulating film comprising a carbon containing silicon oxide (SiOCH) film which has Si—

CH2 bond in the carbon containing silicon oxide film;

wherein the proportion of Si—

CH2 bond (1360 cm−

1) to Si--CH3 bond (1270 cm−

1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.

2. A semiconductor device as set forth in claim 1, wherein the relative dielectric constant of the insulating film is equal to or lower than 3.1.

3. A semiconductor device as set forth in claim 1, wherein the carbon containing silicon oxide (SiOCH) film is formed by using plasma enhanced CVD process.

4. A semiconductor device as set forth in claim 1, wherein the carbon containing silicon oxide (SiOCH) film comprises methylsilsesquioxane.

5. A semiconductor device as set forth in claim 1, wherein, as a portion of the interlayer insulating film, an SiO2 film is formed on the upper layer portion of the insulating film.

6. A semiconductor device as set forth in claim 1, wherein, as a portion of the interlayer insulating film, an insulating film for preventing metal diffusion is formed on the lower layer portion of the insulating film.

7. A semiconductor device as set forth in claim 1, wherein the Cu containing metal contains, in addition to Cu, at least one of Si, Al, Ag, W, Mg, Be, Zn, Pd, Cd, Au, Hg, Pt, Zr, Ti, Sn, Ni and Fe.