Plasma enhanced atomic layer deposition system having reduced contamination

• US 7,422,636 B2
• Filed: 03/25/2005
• Issued: 09/09/2008
• Est. Priority Date: 03/25/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ishizaka, Tadahiro
• Primary Examiner(s): Zervigon; Rudy
• Application Number:
  US11/090,939
• Publication Number:
  US 20060213439A1
• Time in Patent Office: 1,264 Days
• Field of Search: 118/719, 118/666, 118/663, 118/729
• US Class Current: 118/719
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: H01L 21/67155 Apparatus for manufacturing or treating in a plurality of work-stations
• CPC Class Codes: H01L 21/67751 vertical transfer of a single workpiece

Abstract

A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.

Claims

1. An atomic layer deposition system for forming a thin film on a substrate comprising:

a processing chamber comprising a process space in an upper region of said processing chamber configured to facilitate said thin film deposition, and a transfer space in a lower region of said processing chamber having an opening to the upper region at the top thereof, the lower region being configured to facilitate transfer of said substrate into and out of the upper region of said processing chamber;

a substrate holder coupled to said processing chamber and configured to support said substrate and to translate vertically between a first position to locate said substrate in said transfer space and a second position to locate said substrate in said process space, said substrate holder comprising a sealing device configured to seal said substrate holder with said processing chamber to seal the opening and to isolate the transfer space from the process space when said substrate holder is in said second position;

at least two pressure control systems, including;

a first pressure control system coupled to said transfer space and configured to provide a substantially contaminant-free environment in said transfer space when isolated from said process space by the sealing member of the substrate holder when in said second position;

a second pressure control system coupled to said process space and configured to evacuate said process space during processing;

a gas injection system coupled to the upper region of said processing chamber, and configured to alternatingly introduce a first process material and a second process material to said process space;

a power source coupled to said processing chamber, and configured to couple power to said first process material, or said second process material, or both in said process space to facilitate the formation of plasma;

a temperature control system coupled to said substrate holder, and configured to control a temperature of said substrate; and

a process controller operable to control the deposition system to perform a plasma-enhanced atomic layer deposition process on the substrate.

2. The deposition system of claim 1, wherein said deposition system is coupled to a transfer system configured to transport said substrate into said transfer space of said processing chamber through a gate valve coupled to said lower region of said processing chamber.

3. The deposition system of claim 1, wherein said sealing device comprises a labyrinth seal formed between an outer edge of said substrate holder and an inner edge of said upper region of said processing chamber.

4. The deposition system of claim 3, wherein said labyrinth seal comprises a first set of teeth coupled to said substrate holder and configured to mate with a second set of teeth coupled to said processing chamber when said substrate holder is located in said second position.

5. The deposition system of claim 1, wherein said sealing device comprises at least one O-ring seal coupled to said substrate holder, or said processing chamber, or both.

6. The deposition system of claim 1, wherein said substrate holder further comprises a clamping system configured to affix said substrate to said substrate holder.

7. The deposition system of claim 6, wherein said clamping system comprises a mechanical clamping system or an electrical clamping system.

8. The deposition system of claim 1, wherein said substrate holder further comprises a backside gas distribution system configured to supply a heat transfer gas to the backside of said substrate to improve the thermal conduction between said substrate and said substrate holder.

9. The deposition system of claim 1, wherein said first pressure control system comprises a first pumping system and a first valve, and said second pressure control system comprises a second pumping system and a second valve.

10. The deposition system of claim 1, wherein said first pressure control system comprises a cryogenic vacuum pumping system.

11. The deposition system of claim 1, wherein said second pressure control system comprises a turbomolecular vacuum pumping system.

12. The deposition system of claim 1, wherein said gas injection system is configured to alternatingly and cyclically introduce a tantalum containing halogen and a hydrogen containing gas.

13. The deposition system of claim 1, wherein said gas injection system is configured to alternatingly and cyclically introduce tantalum pentachloride and hydrogen.

14. The deposition system of claim 1, wherein said power source is configured to couple power to said second process material.

15. The deposition system of claim 1, wherein said power source is coupled to an electrode within said substrate holder.

16. The deposition system of claim 15, wherein said power source comprises a radio frequency (RF) generator and an impedance match network.

17. The deposition system of claim 1, further comprising:

an upper assembly coupled to said processing chamber, wherein said gas injection system is coupled to said upper assembly and said upper assembly opposes said substrate across said process space.

18. The deposition system of claim 17, wherein said power source is coupled to an electrode formed within said upper assembly.

19. The deposition system of claim 18, wherein a second power source is coupled to said substrate holder.

20. The deposition system of claim 1, further comprising:

a controller coupled to said processing chamber, said substrate holder, said power source, said first and second pressure controls and said gas injection system, and configured to perform at least one of monitoring, adjusting, or controlling said processing of said substrate in said process space.

21. A deposition system for forming a thin film on a substrate comprising:

a processing chamber comprising a process space in an upper region of said processing chamber configured to facilitate said thin film deposition, and a transfer space in a lower region of said processing chamber having an opening to the upper region at the top thereof, the lower region being configured to facilitate transfer of said substrate into and out of the upper region of said processing chamber;

a substrate holder coupled to said processing chamber and configured to support said substrate and to translate vertically between a first position to locate said substrate in said transfer space and a second position to locate said substrate in said process space, said substrate holder comprising a sealing device configured to seal said substrate holder with said processing chamber to seal the opening and to isolate the transfer space from the process space when said substrate holder is in said second position;

means for controlling the pressure in said transfer space in order to provide a substantially contaminant-free environment in said transfer space;

means for controlling the pressure in said process space in order to evacuate said process space during processing;

means for alternatingly introducing a first process material and a second process material to said process space;

means for coupling power to said processing chamber in order to couple power to said first process material, or said second process material, or both in said process space to facilitate the formation of plasma; and

means for controlling the temperature of said substrate.