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Facilitating removal of sacrificial layers via implantation to form replacement metal gates

  • US 7,422,936 B2
  • Filed: 08/25/2004
  • Issued: 09/09/2008
  • Est. Priority Date: 08/25/2004
  • Status: Expired due to Fees
First Claim
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1. A method comprising:

  • forming a sacrificial gate structure;

    forming a hard mask over said sacrificial gate structure;

    performing a first implant of said hard mask;

    forming silicon nitride sidewall spacers around said hard mask;

    performing a second implant to form lightly doped regions;

    removing said hard mask by planarization without removing said spacers, said spacers acting as a polish stop;

    removing said sacrificial gate structure; and

    implanting said hard mask to make said hard mask easier to polish off.

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