Lithographic apparatus, device manufacturing method, and device manufactured thereby with docking system for positioning a patterning device

• US 7,423,733 B2
• Filed: 07/20/2004
• Issued: 09/09/2008
• Est. Priority Date: 07/22/2003
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Leenders, Martinus Hendrikus Antonius, Loopstra, Erik Roelof, Lansbergen, Robert Gabriël Maria, Heerens, Gert-Jan, Van De Ven, Bastiaan Lambertus Wilhelmus Marinus
• Primary Examiner(s): Lee; Diane I.
• Assistant Examiner(s): LIU, CHIA HOW MICHAEL
• Application Number:
  US10/894,367
• Publication Number:
  US 20070159616A1
• Time in Patent Office: 1,512 Days
• Field of Search: 355/75, 355/76, 355/53, 355 72- 74, 430/5
• US Class Current: 355/75
• CPC Class Codes: G03F 7/707 Chucks, e.g. chucking or un-chucking operations or structural details
• CPC Class Codes: G03F 7/70716 Stages
• CPC Class Codes: G03F 7/70741 Handling masks outside exposure position, e.g. reticle libraries
• CPC Class Codes: G03F 7/70783 Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
• CPC Class Codes: G03F 7/70825 Mounting of individual elements, e.g. mounts, holders or supports workpiece or mask holders G03F7/707
• CPC Class Codes: G03F 7/709 Vibration, e.g. vibration detection, compensation, suppression or isolation

Abstract

The invention pertains to a lithographic apparatus that includes a docking system for positioning a patterning device, such as a reticle, relative to the reticle stage. The lithographic projection apparatus has an operational cycle that includes a projection phase, in which the reticle stage carries the patterning device and an exchange phase, in which the patterning device is exchanged and the docking system positions the patterning device relative to the reticle stage. The docking system is configured to be spaced from the patterning device during the projection phase in order to ensure that a higher accuracy of the projected image is obtained.

Claims

1. A lithographic apparatus, comprising:

a substrate holder configured to hold a substrate;

an illuminator configured to condition a beam of radiation;

a support structure configured to support a patterning device that is configured to impart a desired pattern to the beam of radiation, the support structure including a stage;

a projection system configured to project the patterned beam onto a target portion of the substrate; and

a docking system configured to position the patterning device relative to the stage,

wherein the lithographic apparatus operates in accordance with an operational cycle comprising (a) a projection phase, in which the projection system projects the patterned beam onto the substrate target portion and the stage carries the patterning device; and

(b) an exchange phase, in which the patterning device is exchanged and the docking system positions the patterning device relative to the stage,

wherein the docking system is spaced from the patterning device during the projection phase, and

wherein the docking system includes a part coupled to the stage and spaced from the patterning device during the projection phase.

2. The lithographic apparatus of claim 1, wherein the docking system comprises:

a reticle carrier having one or more supports on which the patterning device is positioned relative to the reticle carrier, and

one or more positioning elements to position the supports of the reticle carrier relative to the stage.

3. The lithographic apparatus of claim 2, wherein each of the supports has a carrying face and a first positioning face and each of the positioning elements has a second positioning face and that the first positioning face and the second positioning face are arranged to interact with each other in order to position the reticle carrier relative to the reticle stage during docking of the patterning device relative to the stage.

4. The lithographic apparatus of claim 2, wherein the patterning device comprises an interface to position the patterning device relative to the reticle carrier, the interface configured to interact with the carrying face of one or more of supports of the reticle carrier.

5. The lithographic apparatus of claim 4, wherein the positioning elements project through holes in the interface of the patterning device during the projection phase.

6. The lithographic apparatus of claim 1, wherein during the exchange phase, the docking system is configured to couple the patterning device to the stage.

7. The lithographic apparatus of claim 1, wherein the docking system includes a first part coupled to the stage and a second part, separate from the stage, and wherein the first and second part are configured to cooperate with each other during the exchange phase.

8. The lithographic apparatus of claim 1, wherein the docking system comprises a patterning device carrier including a support configured to support the patterning device, the support constructed and arranged to abut both the patterning device and the part during the exchange phase.

9. A device manufacturing method, comprising:

imparting a beam of radiation with a desired pattern in its cross-section, by use of a patterning device that is carried by a stage;

projecting the patterned beam of radiation onto a target portion of a substrate during a projection phase;

exchanging the patterning device during an exchange phase; and

positioning the patterning device relative to the stage via a docking system during the exchange phase,

wherein the docking system is spaced from the patterning device during the projection phase, and

wherein the docking system includes a part coupled to the stage and spaced from the patterning device during the projection phase.

10. The method of claim 9, wherein the positioning includes coupling the patterning device to the stage during the exchange phase.

11. A lithographic apparatus, comprising:

a substrate holder configured to hold a substrate;

an illuminator configured to condition a beam of radiation;

a support structure configured to support a patterning device that is configured to impart a desired pattern to the beam of radiation, the support structure including a stage;

a projection system configured to project the patterned beam onto a target portion of the substrate; and

a positioning mechanism configured to position the patterning device relative to the stage, the positioning mechanism including a reticle carrier,

wherein the lithographic apparatus operates in accordance with an operational cycle comprising (a) a projection phase, in which the projection system projects the patterned beam onto the substrate target portion and the stage carries the patterning device; and

(b) an exchange phase, in which the patterning device is exchanged and the positioning mechanism positions the patterning device relative to the stage, and

wherein the positioning mechanism further includes a coupling mechanism, separate from the patterning device, that is configured to couple the reticle carrier with the stage during the exchange phase.

12. The lithographic apparatus of claim 11, wherein the reticle carrier comprises an intermediate body adapted to be connected with the patterning device along six degrees of freedom and the coupling mechanism is adapted to couple the intermediate body with the reticle stage during the exchange phase.

13. The lithographic apparatus of claim 12, wherein the coupling mechanism comprises a mechanical docking mechanism.

14. The lithographic apparatus of claim 13, wherein the mechanical docking mechanism comprises three docking elements that are connected to the stage, each of the docking elements having a positioning face that is at least partially spherical and wherein the intermediate body comprises three V-shaped grooves such that the three positioning faces and the three V-shaped grooves are adapted to cooperate in positioning and maintaining the intermediate body relative to the stage.

15. The lithographic apparatus of claim 11, wherein the coupling mechanism comprises an eddy current damping mechanism.

16. The lithographic apparatus of claim 11, wherein the coupling mechanism comprises:

a measuring mechanism configured to measure the relative position of the patterning device and the stage; and

a control mechanism configured to control therelative position of the patterning device and the stage.

17. The lithographic apparatus of claim 11, wherein the stage comprises:

a long stroke unit configured to move the patterning device over relatively large distances, and

a short stroke unit configured to move the patterning device over relatively small distances,

wherein the coupling mechanism is adapted to couple the reticle carrier with the short stroke unit.

18. The lithographic apparatus of claim 11, wherein the stage comprises:

a long stroke unit configured to move the patterning device over relatively large distances, and

a short stroke unit configured to move the patterning device over relatively small distances,

wherein the coupling mechanism is adapted to couple the reticle carrier with the long stroke unit.

19. The lithographic apparatus of claim 11, further comprising:

a measuring mechanism configured to measure the position of the patterning device relative to the stage after coupling the reticle carrier with the stage, and

a correction mechanism configured to generate one or more correction movements that optimize the relative position of the patterning device relative to the stage after coupling the reticle carrier with the stage.

20. The lithographic apparatus of claim 19, wherein the stage comprises:

a long stroke unit configured to move the patterning device over relatively large distances, and

a short stroke unit configured to move the patterning device over relatively small distances,

wherein the correction movements are performed by the short stroke unit.

21. The lithographic apparatus of claim 19, wherein the stage comprises:

a long stroke unit configured to move the patterning device over relatively large distances, and

a short stroke unit configured to move the patterning device over relatively small distances,

wherein the correction movements are performed by the long stroke unit.

22. The lithographic apparatus of claim 19, wherein the correction movements are performed by one or more dedicated actuators.

23. A device manufacturing method, comprising:

imparting a beam of radiation with a desired pattern in its cross-section by use of a patterning device;

projecting the patterned beam of radiation onto a target portion of a substrate during a projection phase, wherein the patterning device is carried by a stage during the projection phase;

exchanging the patterning device during an exchange phase;

positioning the patterning device relative to the stage via a positioning mechanism during the exchange phase, the positioning mechanism comprising a reticle carrier; and

coupling the reticle carrier with the stage during the exchange phase with a coupling mechanism that is separate from the patterning device.

24. A lithographic apparatus, comprising:

a substrate holder configured to hold a substrate;

an illuminator configured to condition a beam of radiation;

a support structure configured to support a patterning device that is configured to impart a desired pattern onto the beam of radiation, the support structure including a stage;

a projection system configured to project the patterned beam onto a target portion of the substrate;

a positioning mechanism configured to position the patterning device relative to the stage, the positioning mechanism including a reticle carrier,

wherein the lithographic apparatus operates in accordance with an operational cycle comprising;

(a) a projection phase, in which the projection system projects the patterned beam onto the substrate target portion and the stage carries the patterning device; and

(b) an exchange phase, in which the patterning device is exchanged and the positioning mechanism positions the patterning device relative to the stage, the stage being adapted to perform a loading stroke that extends between an operational area for the patterning device and an exchange area for the patterning device; and

a position measuring system configured to measure the position of the stage along a general plane defined by the patterning device, the position measuring system comprising a sensor that is configured to measure the position of the stage in a direction substantially perpendicular to a direction of the loading stroke,

wherein the exchange area is arranged relative to the operational area such that the sensor is able to measure the position of the stage in the operational area during the projection phase and in the exchange area during the exchange phase.

25. The lithographic apparatus of claim 24, further comprising an additional measuring mechanism configured to measure the position of the stage perpendicular to the plane of the patterning device, the second measuring mechanism comprising a z-sensor.

26. The lithographic apparatus of claim 24, wherein the sensor comprises an interferometer.

27. A lithographic apparatus, comprising:

a substrate holder configured to hold a substrate;

an illuminator configured to condition a beam of radiation;

a support structure configured to support a patterning device that is configured to impart a desired pattern to the beam of radiation, the support structure including a stage;

a projection system configured to project the patterned beam onto a target portion of the substrate;

a positioning mechanism configured to position the patterning device relative to the stage, the positioning mechanism including a reticle carrier,

wherein the lithographic apparatus operates in accordance with an operational cycle comprising;

(a) a projection phase, in which the projection system projects the patterned beam onto the substrate target portion and the stage carries the patterning device; and

(b) an exchange phase, in which the patterning device is exchanged and the positioning mechanism positions the patterning device relative to the stage, the stage being adapted to perform a loading stroke that extends between an operational area for the patterning device and an exchange area for the patterning device; and

a position measuring system configured to measure the position of the stage substantially perpendicular to a general plane defined by the patterning device, the measuring system comprising a sensor, and

wherein the exchange area is arranged relative to the operational area such that the sensor is able to measure the position of the stage in the operational area during the projection phase and in the exchange area during the exchange phase.

28. The lithographic apparatus of claim 27, wherein the sensor comprises an interferometer.

29. A device manufacturing method, comprising:

providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

conditioning a beam of radiation;

imparting the conditioned beam of radiation with a desired pattern in its cross-section by use of a patterning device;

projecting the patterned beam of radiation onto a target portion of the first substrate during a projection phase wherein the patterning device is carried by a stage during the projection phase;

exchanging the patterning device during an exchange phase;

wherein the stage is adapted to perform a loading stroke during the exchange phase, wherein the loading stroke extends between an operational area for the patterning device and an exchange area for the patterning device during the exchange phase,

wherein the position of the stage along a general plane defined by the patterning device is measured via a position measuring system that comprises a sensor that measures the position of the stage in a direction substantially perpendicular to the direction of the loading stroke, and

wherein the exchange area is arranged relative to the operational area such that the sensor is able to measure the position of the stage in the operational area during the projection phase and in the exchange area during the exchange phase.

30. A device manufacturing method, comprising:

providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

imparting a beam of radiation with a desired pattern in its cross-section by use of a patterning device;

projecting the patterned beam of radiation onto a target portion of the first substrate during the projection phase wherein the pattering device is carried by a stage during the projection phase;

exchanging the patterning device during an exchange phase;

wherein the stage is adapted to perform a loading stroke during the exchange phase, wherein the loading stroke extends between an operational area for the patterning device and an exchange area for the patterning device,

wherein the position of the stage substantially perpendicular to a general plane defined by the patterning device is measured via a position measuring system that comprises a sensor, and

wherein the exchange area is arranged relative to the operational area such that the sensor is able to measure the position of the stage in the operational area during the projection phase and in the exchange area during the exchange phase.

31. The device manufacturing method of claim 30, further including measuring the position of the reticle stage perpendicular to the plane of the patterning device using an additional position measuring system, the additional position measuring system comprising another sensor, wherein the exchange area is arranged relative to the operational area such that the additional position measuring system is able to measure the position of the stage in the operational area during the projection phase and in the exchange area during the exchange phase.