Ion implantation simulation apparatus, method, and program

• US 7,424,411 B2
• Filed: 01/10/2005
• Issued: 09/09/2008
• Est. Priority Date: 01/09/2004
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ito, Sanae
• Primary Examiner(s): Frejd; Russell
• Application Number:
  US11/030,982
• Publication Number:
  US 20050203721A1
• Time in Patent Office: 1,338 Days
• Field of Search: 703/2, 703/6, 703/13, 700/119, 700/121, 700/123
• US Class Current: 703/2
• CPC Class Codes: G06F 2111/08 Probabilistic or stochastic CAD
• CPC Class Codes: G06F 30/23 using finite element methods [FEM] or finite difference methods [FDM]
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Abstract

The group creation part divides n ion particles into groups of a group G₁, a group G2, . . . , and a group G_k. The individual area setting part sets an initial condition calculation area 1a, as an individual area of the group G₁, and makes the calculation part calculate movement of the ion particle. Then, one by one, the individual area setting part sets an individual area of a group G_i+1, based on a range Rp, a dispersion σL, etc. indicating a calculation result of an ion particle belonging to the group G_i. Further, the individual area setting part implants an ion particle belonging to the group G_i+1 into the individual area of the group G_i+1 and makes the calculation part calculate movement of the implanted ion particle.

Claims

1. An ion implantation simulation apparatus for simulating movement of an ion particle to which a particle number is given, comprising:

a group creation part to divide n ion particles (n≧

3) into groups of at least three, according to the particle number;

an individual area setting part to individually set up a calculation area, as an individual area, indicating an area for calculating movement of one of the n ion particles for each of the groups divided by the group creation part, and to implant the one of the n ion particles into the individual area individually set up for performing simulation;

a calculation part to calculate the movement of the one of the n ion particles implanted by the individual area setting part to simulate movement of the one of the n ion particles; and

an output device configured to output a result of the simulated movement of the one of the n ion particles.

2. The ion implantation simulation apparatus of claim 1 further comprising:

a storage part to store a calculation area defined based on an initial condition, as an initial condition calculation area,

wherein the group creation part divides the n ion particles into k (k≧

3) groups of a group G₁, a group G₂, . . . , and a group G_k in order of the particle number, and

the individual area setting part sets the initial condition calculation area stored by the storage part, as an individual area of the group G₁, implants an ion particle belonging to the group G₁ into the individual area of the group G₁, and makes the calculation part calculate movement of an implanted ion particle,

based on a calculation result of the movement of the implanted ion particle belonging to the group G₁, sets an individual area of the group G₂, implants an ion particle belonging to the group G₂ into the individual area of the group G₂, and makes the calculation part calculate movement of an implanted ion particle, and

one by one, based on a calculation result of movement of an ion particle belonging to a group G₁ (2≦

i≦

k−

1), sets an individual area of a group G_i+1, implants an ion particle belonging to the group G_i+1 into the individual area of the group G_i+1 and makes the calculation part calculate movement of an implanted ion particle.

3. The ion implantation simulation apparatus of claim 1, wherein the group creation part determines a number of groups to be divided, based on n indicating a number of ion particles.

4. The ion implantation simulation apparatus of claim 2, wherein the individual area setting part, in a case of setting an individual area of a group G_j (2≦

j≦

k), sets the individual area by using an implantation angle of an ion particle, a range in an incident direction of the ion particle, and a standard deviation of a stopping position perpendicular to the incident direction of the ion particle which are concerning implantation of the ion particle belonging to a group G<sub>j−

1</sub> into an individual area of the group G<sub>j−

1</sub>.

5. The ion implantation simulation apparatus of claim 2, wherein the individual area setting part, in a case of setting an individual area of a group G_j (2≦

j≦

k), based on a calculation result of movement of an ion particle belonging to a group G<sub>j−

1</sub>, judges whether to set an individual area of the group G<sub>j−

1</sub> as the individual area of the group G_j, if it is judged to set, sets the individual area of the group G<sub>j−

1</sub> as the individual area of the group G_j, and if it is judged not to set, sets an individual area different from the individual area of the group G<sub>j−

1</sub> as the individual area of the group G_j.

6. The ion implantation simulation apparatus of claim 2, wherein the group creation part determines a number of groups to be divided, based on n indicating a number of ion particles.

7. The ion implantation simulation apparatus of claim 4, wherein the individual area setting part, in a case of setting an individual area of a group G_j (2≦

j≦

k), based on a calculation result of movement of an ion particle belonging to a group G<sub>j−

1</sub>, judges whether to set an individual area of the group G<sub>j−

1</sub> as the individual area of the group G_j, if it is judged to set, sets the individual area of the group G<sub>j−

1</sub> as the individual area of the group G_j, and if it is judged not to set, sets an individual area different from the individual area of the group G<sub>j−

1</sub>, as the individual area of the group G_j.

8. The ion implantation simulation apparatus of claim 4, wherein the group creation part determines a number of groups to be divided, based on n indicating a number of ion particles.

9. The ion implantation simulation apparatus of claim 5, wherein the group creation part determines a number of groups to be divided, based on n indicating a number of ion particles.

10. An ion implantation simulation method for simulating movement of an ion particle to which a particle number is given, comprising:

dividing n ion particles (n≧

3) into groups of at least three, according to the particle number;

individually setting up a calculation area, as an individual area, indicating an area for calculating movement of one of the n ion particles, for each of divided groups, and implanting the one of the n ion particles into the individual area individually set up, for performing simulation;

calculating the movement of implanted one of the n ion particles to simulate movement of the one of the n ion particles; and

outputting a result of the simulated movement of the one of the n ion particles.

11. A computer readable storage medium including computer program instructions, which when executed by a computer, cause the computer to perform a method of simulating movement of an ion particle to which a particle number is given, the method comprising:

dividing n ion particles (n≧

3) into groups of at least three, according to the particle number;

individually setting up a calculation area, as an individual area, indicating an area for calculating movement of one of the n ion particles, for each of divided groups, and implanting the one of the n ion particles into the individual area individually set up, for performing simulation;

calculating the movement of implanted one of the n ion particles to simulate movement of the one of the n ion particles; and

outputting a result of the simulated movement of the one of the n ion particles.