Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth

• US 7,424,772 B2
• Filed: 01/12/2006
• Issued: 09/16/2008
• Est. Priority Date: 10/30/2003
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Larson, John D. III
• Primary Examiner(s): ARBES, CARL J
• Application Number:
  US11/332,665
• Publication Number:
  US 20060114080A1
• Time in Patent Office: 978 Days
• Field of Search: 29/253.5, 298/25, 310/324, 310/334
• US Class Current: 29/25.35
• CPC Class Codes: H03H 9/132 characterized by a particular shape
• CPC Class Codes: H03H 9/584 Coupled Resonator Filters [CFR]
• CPC Class Codes: H03H 9/587 Air-gaps
• CPC Class Codes: H03H 9/605 consisting of a ladder configuration
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Claims

1. A method of fabricating an acoustically-coupled device, the method comprising:

fabricating a first film bulk acoustic resonator (FBAR);

fabricating an acoustic decoupler on the first FBAR;

fabricating a second FBAR on the acoustic decoupler, including subjecting the acoustic decoupler to a fabrication temperature; and

prior to fabricating the second FBAR, baking the first FBAR and the acoustic decoupler at a baking temperature not lower than the fabrication temperature.

2. The method of claim 1, in which the acoustic decoupler comprises a layer of polyimide.

3. The method of claim 2, in which fabricating the acoustic decoupler comprises depositing the layer of polyimide by spin coating.

4. The method of claim 1, in which fabricating the second FBAR comprises depositing the second FBAR over the acoustic decoupler by sputtering.

5. The method of claim 4, in which the fabrication temperature is about 300°

C.

6. The method of claim 5, in which the baking temperature is about 300°

C.

7. The method of claim 1, in which fabricating the first FBAR comprises:

depositing a first metal layer over a substrate to form a first electrode;

depositing a first piezoelectric material over the first metal layer to form a first piezoelectric layer; and

depositing a second metal layer over the first piezoelectric layer to form a second electrode.

8. The method of claim 7, in which fabricating the acoustic decoupler comprises:

depositing an acoustic decoupling material over the second electrode.

9. The method of claim 8, in which the acoustic decoupling material comprises a polyimide.

10. The method of claim 8, in which fabricating the second FBAR comprises:

depositing a third metal layer over the acoustic decoupler to form a third electrode;

depositing a second piezoelectric material over the third electrode to form a second piezoelectric layer; and

depositing a fourth metal layer over the second piezoelectric layer to form a fourth electrode.

11. The method of claim 10, in which each of the first and second piezoelectric materials comprises one of aluminum nitride, zinc oxide and lead zirconium titanate.

12. The method of claim 11, in which each of the first, second, third and fourth metal layers comprises one of molybdenum, tungsten, niobium and titanium.

13. A method of fabricating an acoustically-coupled device, the method comprising:

forming a first film bulk acoustic resonator (FBAR) over a substrate;

forming an acoustic decoupler over the first FBAR;

baking the deposited first FBAR and the acoustic decoupler at a first temperature; and

forming a second FBAR over the acoustic decoupler after baking the first FBAR and the acoustic decoupler, reaching a second temperature while forming the second FBAR, wherein the second temperature does not exceed the first temperature.

14. The method of claim 13, wherein forming the acoustic decoupler comprises depositing and patterning an acoustic decoupling material over the first FBAR.

15. The method of claim 14, wherein the acoustic decoupling material comprises a polyimide.

16. The method of claim 15, wherein baking the deposited first FBAR and the deposited acoustic decoupler evaporates volatile constituents of the polyimide, preventing evaporation of the volatile constituents during the forming of the second FBAR.

17. The method of claim 16, wherein depositing the acoustic decoupling material comprises spin coating and patterning the deposited acoustic decoupling material.

18. A method of fabricating an acoustic filter, the method comprising:

filling a cavity in a substrate with a fill material;

forming a first film bulk acoustic resonator (FBAR) over the fill material and the substrate;

forming an acoustic decoupler over the first FBAR; and

forming a second FBAR over the acoustic decoupler,

wherein, prior to forming the second FBAR, baking the first FBAR and the acoustic decoupler at a baking temperature that is not less than a temperature used for forming the second FBAR.

19. The method of claim 18, wherein the fill material comprises phosphosilicate glass, and filling the cavity in the substrate comprises one of a low-pressure chemical vapor deposition, spin coating or sputtering.

20. The method of claim 19, wherein baking the first FBAR and the acoustic decoupler evaporates volatile constituents of a material of the acoustic decoupler, preventing evaporation of the volatile constituents while forming the second FBAR over the acoustic decoupler.