Method of fabricating a multi-post structures on a substrate

• US 7,425,465 B2
• Filed: 05/15/2006
• Issued: 09/16/2008
• Est. Priority Date: 05/15/2006
• Status: Active Grant

• Current Assignee: Fujifilm Dimatix, Inc. (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Dimatix, Inc. (Fujifilm Holdings Corporation)
• Inventors: Birkmeyer, Jeffrey
• Primary Examiner(s): Chambliss; Alonzo
• Application Number:
  US11/383,437
• Publication Number:
  US 20070264749A1
• Time in Patent Office: 855 Days
• Field of Search: None
• US Class Current: 438/107
• CPC Class Codes: B81C 1/00111 Tips, pillars, i.e. raised structures microneedles A61M37/0015
• CPC Class Codes: B81C 2203/036 Fusion bonding

Abstract

Micromechanical devices having complex multilayer structures and techniques for forming the devices are described.

Claims

1. A method of forming a post structure assembly, comprising:

bonding a first substrate to a second substrate, wherein the bonding is achieved without a bonding layer;

patterning the second substrate, wherein the patterning leaves a first portion of material of the second substrate and a second portion of material of the second substrate and removes material between the first and second portions of the second substrate, the first potion forming a plurality of structures and the second portion forming an assembly that is a unitary structure having a plurality of apertures therein; and

separating the second portion of the second substrate from the first substrate, wherein the second portion does not include the structures.

2. The method of claim 1, wherein bonding the first substrate to the second substrate includes bonding together two substrates that include silicon.

3. The method of claim 2, wherein the second substrate has a thickness and patterning the second substrate includes patterning one or more through-holes that extend through the thickness of the second substrate.

4. The method of claim 2, wherein patterning the second substrate includes deep reactive ion etching.

5. The method of claim 2, wherein bonding the first substrate to the second substrate includes bonding together two silicon substrates.

6. The method of claim 5, wherein bonding together the two silicon substrates includes forming a fusion bond.

7. The method of claim 2, further comprising annealing the assembly so that the first substrate and the structures become permanently bonded together.

8. The method of claim 7, wherein annealing the assembly forms an assembly that is substantially free of oxide between the structures and the first substrate.

9. The method of claim 2, further comprising bonding a third substrate to top surfaces of the structures.

10. The method of claim 9, further comprising annealing the third substrate to the top surfaces of the structures.

11. The method of claim 9, wherein bonding the third substrate includes bonding a substrate having one or more apertures formed therein to the top surfaces of the structures.

12. The method of claim 9, wherein bonding the third substrate includes bonding a substrate having one or more recesses formed therein to the top surfaces of the structures.

13. The method of claim 2, wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of posts.

14. The method of claim 13, wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes the second substrate so that the first portion of material forms patterning a plurality of round posts.

15. The method of claim 13, wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of conical posts.

16. The method of claim 13, wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of posts each having a polygonal shape.

17. The method of claim 13, wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of posts having a cross-section having a shape with at least one curved side.

18. The method of claim 13, wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of hollow posts.