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Non-volatile memory device and method for fabricating the same

  • US 7,425,482 B2
  • Filed: 10/12/2005
  • Issued: 09/16/2008
  • Est. Priority Date: 10/13/2004
  • Status: Active Grant
First Claim
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1. A method for fabricating a non-volatile memory device, comprising:

  • forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate;

    forming a first insulation layer covering the gate structures and active regions located at each side of the gate structures;

    forming a second electrode layer over the first insulation layer;

    forming a plurality of control gates on the active regions located at each side of the gate structures by performing an etch-back process to the second electrode layer; and

    performing a silicide process in a cell area including a plurality of control gates on the active regions located at each side of the gate structures.

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