Non-volatile memory device and method for fabricating the same
First Claim
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1. A method for fabricating a non-volatile memory device, comprising:
- forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate;
forming a first insulation layer covering the gate structures and active regions located at each side of the gate structures;
forming a second electrode layer over the first insulation layer;
forming a plurality of control gates on the active regions located at each side of the gate structures by performing an etch-back process to the second electrode layer; and
performing a silicide process in a cell area including a plurality of control gates on the active regions located at each side of the gate structures.
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Abstract
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate; forming a first insulation layer covering the gate structures and active regions located at each side of the gate structures; forming a second electrode layer over the first insulation layer; and forming a plurality of control gates on the active regions located at each side of the gate structures by performing an etch-back process to the second electrode layer.
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Citations
23 Claims
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1. A method for fabricating a non-volatile memory device, comprising:
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forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate; forming a first insulation layer covering the gate structures and active regions located at each side of the gate structures; forming a second electrode layer over the first insulation layer; forming a plurality of control gates on the active regions located at each side of the gate structures by performing an etch-back process to the second electrode layer; and performing a silicide process in a cell area including a plurality of control gates on the active regions located at each side of the gate structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating a non-volatile memory device, comprising:
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forming a plurality of first gate structures on a first region of a substrate, wherein each gate structure includes a first electrode layer for a floating gate; forming a first insulation layer on the first gate structures and active regions located at each side of the first gate structure, and a second region of the substrate; forming a second electrode layer over the first insulation layer; forming a plurality of control gates on the active regions located at each side of the first gate structures by performing an etch-back process to the second electrode layer, and simultaneously forming a plurality of second gate structures on the second region of the substrate using a photoresist pattern as an etch mask; and forming a silicide process in a cell area including a plurality of control gates on the active regions located at each side of the gate structures. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification