Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory
First Claim
1. A magnetoresistive element comprising:
- a magnetoresistive film comprising;
a buffer layer;
an antiferromagnetic layer formed on the buffer layer;
a magnetization pinned layer, formed on the antiferromagnetic layer, whose magnetization is substantially pinned to one direction;
a nonmagnetic intermediate layer formed on the magnetization pinned layer; and
a magnetization free layer, formed on the nonmagnetic intermediate layer, whose magnetization is changed in direction depending on an external magnetic field; and
a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film,wherein the buffer layer comprises three layers selected from the group consisting of a Ta layer, (Ni100-xFex)100-yCry alloy layer (15≦
x≦
25, 20≦
y≦
30), (Ni100-xFex)100-yCry alloy layer (15≦
x≦
25, 30<
y≦
45), Cu layer, Ru layer, and Co100-xFex layer (5<
x<
15),and wherein the nonmagnetic intermediate layer includes at least two elements selected from the group consisting of Al, Cr, Mg, Hf, Zr, Si, Ta, Ti, V, Mo, W, Au, Ag, Cu, Pt, Nb, Re, Pd, B and C, and comprises an insulator formed of an oxide of a part of the elements and current paths penetrating the insulator and formed of another part of the elements,and wherein the magnetization free layer comprises a body-centered cubic layer with a body-centered cubic structure, the body-centered cubic layer having a thickness of 2 nm or more.
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Abstract
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction depending on an external magnetic field, in which the magnetization pinned layer or nonmagnetic intermediate layer includes an insulator, and a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetization free layer includes a body-centered cubic layer with a body-centered cubic structure, and the thickness of the body-centered cubic layer is 2 nm or more.
34 Citations
9 Claims
-
1. A magnetoresistive element comprising:
-
a magnetoresistive film comprising;
a buffer layer;
an antiferromagnetic layer formed on the buffer layer;
a magnetization pinned layer, formed on the antiferromagnetic layer, whose magnetization is substantially pinned to one direction;
a nonmagnetic intermediate layer formed on the magnetization pinned layer; and
a magnetization free layer, formed on the nonmagnetic intermediate layer, whose magnetization is changed in direction depending on an external magnetic field; anda pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film, wherein the buffer layer comprises three layers selected from the group consisting of a Ta layer, (Ni100-xFex)100-yCry alloy layer (15≦
x≦
25, 20≦
y≦
30), (Ni100-xFex)100-yCry alloy layer (15≦
x≦
25, 30<
y≦
45), Cu layer, Ru layer, and Co100-xFex layer (5<
x<
15),and wherein the nonmagnetic intermediate layer includes at least two elements selected from the group consisting of Al, Cr, Mg, Hf, Zr, Si, Ta, Ti, V, Mo, W, Au, Ag, Cu, Pt, Nb, Re, Pd, B and C, and comprises an insulator formed of an oxide of a part of the elements and current paths penetrating the insulator and formed of another part of the elements, and wherein the magnetization free layer comprises a body-centered cubic layer with a body-centered cubic structure, the body-centered cubic layer having a thickness of 2 nm or more. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification