Method of manufacturing a light-emitting device, personal computer using the same, and portable telephone using the same

• US 7,427,223 B2
• Filed: 01/12/2004
• Issued: 09/23/2008
• Est. Priority Date: 01/29/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): WILLIAMS, JOSEPH L
• Application Number:
  US10/754,542
• Publication Number:
  US 20040140465A1
• Time in Patent Office: 1,716 Days
• Field of Search: 313504-506, 313/509, 313/512, 445 23- 25
• US Class Current: 445/23
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/8052 Cathodes
• CPC Class Codes: H10K 59/8791 Arrangements for improving contrast, e.g. preventing reflection of ambient light

Abstract

There is provided a method for manufacturing a light emitting device in which no copy-in is caused in the case of a light emitting device having a glossy cathode. An uneven portion is formed on the surface of a cathode which is in contact with an organic layer in a pixel portion, and incident light is reflected in all directions. An insulating film having a high light absorption property is formed in a driver circuit portion, and the copy-in becomes invisible to the observer.

Claims

1. A method of manufacturing a light emitting device, said method comprising:

forming a first insulating film, wherein the first insulating film includes a first opening;

forming at least a transparent protrusion to overlap the first opening;

forming a first electrode to overlap the transparent protrusion;

forming a light emitting layer to overlap the first electrode; and

forming a second electrode over the light emitting layer.

2. A method according to claim 1, further comprising:

forming a second insulating film in a transverse direction of the transparent protrusion, wherein the second insulating film has a light absorption property.

3. A method according to claim 1, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening.

4. A method according to claim 1, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

wherein the first insulating film has a light absorption property.

5. A method according to claim 1, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film; and

forming a third opening in the second insulating film.

6. A method according to claim 1, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film, wherein the second insulating film has a light absorption property; and

forming a third opening in the second insulating film.

7. A method according to claim 1, wherein the transparent protrusion comprises a microlens.

8. A method according to claim 1, wherein the light emitting layer comprises an organic material.

9. A method according to claim 1, wherein a surface of the second electrode in contact with the light emitting layer is uneven.

42. A method according to claim 1, wherein the second electrode is a cathode.

10. A method of manufacturing a light emitting device, said method comprising:

forming a first insulating film, wherein the first insulating film includes a first opening;

forming at least a protrusion having a property of transmitting light to overlap the first opening;

forming a first electrode to overlap the protrusion;

forming a light emitting layer to overlap the first electrode; and

forming a second electrode over the light emitting layer.

11. A method according to claim 10, further comprising:

forming a second insulating film in a transverse direction of the protrusion, wherein the second insulating film has a light absorption property.

12. A method according to claim 10, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening.

13. A method according to claim 10, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

wherein the first insulating film has a light absorption property.

14. A method according to claim 10, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film; and

forming a third opening in the second insulating film.

15. A method according to claim 10, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film, wherein the second insulating film has a light absorption property; and

forming a third opening in the second insulating film.

16. A method according to claim 10, wherein the light emitting layer comprises an organic material.

17. A method according to claim 10, wherein a surface of the second electrode in contact with the light emitting layer is uneven.

43. A method according to claim 10, wherein the second electrode is a cathode.

18. A method of manufacturing a light emitting device, said method comprising:

forming a first insulating film, wherein the first insulating film includes a first opening;

forming at least a microlens to overlap the first opening;

forming a first electrode to overlap the microlens;

forming a light emitting layer to overlap the first electrode; and

forming a second electrode over the light emitting layer.

19. A method according to claim 18, further comprising:

forming a second insulating film in a transverse direction of the microlens, wherein the second insulating film has a light absorption property.

20. A method according to claim 18, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening.

21. A method according to claim 18, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

wherein the first insulating film has a light absorption property.

22. A method according to claim 18, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film; and

forming a third opening in the second insulating film.

23. A method according to claim 18, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film, wherein the second insulating film has a light absorption property; and

forming a third opening in the second insulating film.

24. A method according to claim 18, wherein the light emitting layer comprises an organic material.

25. A method according to claim 18, wherein a surface of the second electrode in contact with the light emitting layer is uneven.

44. A method according to claim 18, wherein the second electrode is a cathode.

26. A method of manufacturing a light emitting device, said method comprising:

forming a first insulating film, wherein the first insulating film includes a first opening;

forming at least a layer containing a transparent material to overlap the first opening;

forming a first electrode to overlap the layer;

forming a light emitting layer to overlap the first electrode; and

forming a second electrode over the light emitting layer,

wherein a surface of the second electrode in contact with the light emitting layer is uneven.

27. A method according to claim 26, further comprising:

forming a second insulating film in a transverse direction of the layer, wherein the second insulating film has a light absorption property.

28. A method according to claim 26, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening.

29. A method according to claim 26, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening.

wherein the first insulating film has a light absorption property.

30. A method according to claim 26, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film; and

forming a third opening in the second insulating film.

31. A method according to claim 26, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film, wherein the second insulating film has a light absorption property; and

forming a third opening in the second insulating film.

32. A method according to claim 26, wherein the light emitting layer comprises an organic material.

33. A method according to claim 26, wherein the layer has a protrusion.

45. A method according to claim 26, wherein the second electrode is a cathode.

34. A method of manufacturing a light emitting device, said method comprising:

forming a first insulating film, wherein the first insulating film includes a first opening;

forming at least a layer having a property of transmitting light to overlap the first opening;

forming a first electrode to overlap the layer;

forming a light emitting layer to overlap the first electrode; and

forming a second electrode over the light emitting layer,

wherein a surface of the second electrode in contact with the light emitting layer is uneven.

35. A method according to claim 34, further comprising:

forming a second insulating film in a transverse direction of the layer, wherein the second insulating film has a light absorption property.

36. A method according to claim 34, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening.

37. A method according to claim 34, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film; and

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

wherein the first insulating film has a light absorption property.

38. A method according to claim 34, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film; and

forming a third opening in the second insulating film.

39. A method according to claim 34, further comprising:

forming a thin film transistor over a substrate, wherein the thin film transistor comprises a semiconductor film and a gate electrode;

forming a second opening in the first insulating film;

forming a wiring over the first insulating film, wherein the wiring is electrically connected to the semiconductor film through the second opening;

forming a second insulating film in contact with the first insulating film, wherein the second insulating film has a light absorption property; and

forming a third opening in the second insulating film.

40. A method according to claim 34, wherein the light emitting layer comprises an organic material.

41. A method according to claim 34, wherein the layer has a protrusion.

46. A method according to claim 34, wherein the second electrode is a cathode.