Method of making light emitting device with silicon-containing encapsulant
First Claim
1. A method of making a light emitting device, the method comprising:
- providing a light emitting diode; and
forming an encapsulant in contact with the light emitting diode, wherein forming the encapsulant comprises;
contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin, a metal-containing catalyst, and surface treated particles, the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation, the surface treated particles comprising nonabsorbing metal oxide particles, semiconductor particles, or combinations thereof; and
applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.
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Abstract
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin, a metal-containing catalyst, and surface treated particles, the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation, the surface treated particles comprising nonabsorbing metal oxide particles, semiconductor particles, or combinations thereof, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.
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Citations
18 Claims
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1. A method of making a light emitting device, the method comprising:
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providing a light emitting diode; and forming an encapsulant in contact with the light emitting diode, wherein forming the encapsulant comprises; contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin, a metal-containing catalyst, and surface treated particles, the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation, the surface treated particles comprising nonabsorbing metal oxide particles, semiconductor particles, or combinations thereof; and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification