Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
First Claim
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1. A method for forming a planar, non-polar gallium nitride (GaN) film on a substrate, comprising:
- (a) loading a substrate into a reactor;
(b) heating the reactor to a growth temperature;
(c) reducing the reactor'"'"'s pressure to a desired deposition pressure, wherein the desired deposition pressure is below atmospheric pressure;
(d) initiating a gaseous hydrogen chloride (HCl) flow to a gallium (Ga) source to begin heteroepitaxial growth of the non-polar GaN film directly on the substrate, wherein the gaseous HCl reacts with the Ga to form gallium monochloride (GaCl);
(e) transporting the GaCl to the substrate using a carrier gas that includes at least a fraction of hydrogen (H2), wherein the GaCl reacts with ammonia (NH3) at the substrate to form the non-polar GaN film; and
(f) after a desired growth time has elapsed, interrupting the gaseous HCl flow, returning the reactor'"'"'s pressure to atmospheric pressure, and reducing the reactor'"'"'s temperature to room temperature, wherein the resulting non-polar GaN film has a planar and specular top surface suitable for subsequent device regrowth.
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Abstract
Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
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Citations
18 Claims
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1. A method for forming a planar, non-polar gallium nitride (GaN) film on a substrate, comprising:
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(a) loading a substrate into a reactor; (b) heating the reactor to a growth temperature; (c) reducing the reactor'"'"'s pressure to a desired deposition pressure, wherein the desired deposition pressure is below atmospheric pressure; (d) initiating a gaseous hydrogen chloride (HCl) flow to a gallium (Ga) source to begin heteroepitaxial growth of the non-polar GaN film directly on the substrate, wherein the gaseous HCl reacts with the Ga to form gallium monochloride (GaCl); (e) transporting the GaCl to the substrate using a carrier gas that includes at least a fraction of hydrogen (H2), wherein the GaCl reacts with ammonia (NH3) at the substrate to form the non-polar GaN film; and (f) after a desired growth time has elapsed, interrupting the gaseous HCl flow, returning the reactor'"'"'s pressure to atmospheric pressure, and reducing the reactor'"'"'s temperature to room temperature, wherein the resulting non-polar GaN film has a planar and specular top surface suitable for subsequent device regrowth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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