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Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

  • US 7,427,555 B2
  • Filed: 07/15/2003
  • Issued: 09/23/2008
  • Est. Priority Date: 12/16/2002
  • Status: Expired due to Term
First Claim
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1. A method for forming a planar, non-polar gallium nitride (GaN) film on a substrate, comprising:

  • (a) loading a substrate into a reactor;

    (b) heating the reactor to a growth temperature;

    (c) reducing the reactor'"'"'s pressure to a desired deposition pressure, wherein the desired deposition pressure is below atmospheric pressure;

    (d) initiating a gaseous hydrogen chloride (HCl) flow to a gallium (Ga) source to begin heteroepitaxial growth of the non-polar GaN film directly on the substrate, wherein the gaseous HCl reacts with the Ga to form gallium monochloride (GaCl);

    (e) transporting the GaCl to the substrate using a carrier gas that includes at least a fraction of hydrogen (H2), wherein the GaCl reacts with ammonia (NH3) at the substrate to form the non-polar GaN film; and

    (f) after a desired growth time has elapsed, interrupting the gaseous HCl flow, returning the reactor'"'"'s pressure to atmospheric pressure, and reducing the reactor'"'"'s temperature to room temperature, wherein the resulting non-polar GaN film has a planar and specular top surface suitable for subsequent device regrowth.

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