Film-bulk acoustic wave resonator with motion plate and method

• US 7,427,819 B2
• Filed: 03/04/2005
• Issued: 09/23/2008
• Est. Priority Date: 03/04/2005
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Wireless IP Pte Limited
• Inventors: Larson, John D. III, Trutna, William R., Hoen, Storrs T., Unkrich, Mark A., Grot, Annette, Flower, Graham M., Ruby, Richard C
• Primary Examiner(s): San Martin; Jaydi A
• Application Number:
  US11/073,345
• Publication Number:
  US 20060197411A1
• Time in Patent Office: 1,299 Days
• Field of Search: 310/320, 310330-332, 310/324, 310/323.21, 324/633
• US Class Current: 310/320
• CPC Class Codes: G01L 1/165 with acoustic surface waves
• CPC Class Codes: G01P 15/097 by vibratory elements

Abstract

An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an acoustic reflector formed in an FBAR wafer and a surface. A first electrode is formed on the surface of the acoustic reflector and has a surface. A piezoelectric layer is formed on the surface of the first electrode and has a surface. A second electrode is formed on the surface of the piezoelectric layer. A motion plate is suspended in space at a predetermined distance relative to the surface of the second electrode and is capacitively coupled to the FBAR.

Claims

1. A method for utilizing a film-bulk acoustic resonator with a motion plate to detect a change in a target environmental variable, the method comprising:

providing a film-bulk acoustic resonator (FBAR) on a first wafer, said FBAR comprising at least one resonant property;

providing the motion plate spaced from the FBAR such that a capacitive connection is formed between the motion plate and the FBAR and such that changes in the capacitance between the motion plate and the FBAR cause a change in the resonant property of the FBAR; and

detecting a change in the target environmental variable by employing the FBAR and motion plate to detect a change in the resonant property of the FBAR.

2. The method of claim 1 further including:

providing a second film-bulk acoustic resonator (FBAR) comprising at least one resonant property on the first wafer;

providing a stationary plate spaced from said second FBAR;

employing the first FBAR and the second FBAR to measure a change in the resonant property of the second FBAR.

3. The method of claim 2 wherein:

the stationary plate is capacitively coupled to the second film-bulk acoustic resonator; and

wherein changes in the capacitance between the stationary plate and the second FBAR cause a change in the resonant property of the second FBAR; and

detecting a change in one of pressure, acceleration, and other environmental variable by employing the second FBAR and the stationary plate to measure a change in the resonant property of the second FBAR.

4. The method of claim 2 wherein physical displacement of the motion plate can be detected by one of measuring the beat frequency of the first FBAR and the second FBAR and mixing a signal at the resonant frequency of the first FBAR with a signal at the resonant frequency of the second FBAR.

5. The method of claim 1 wherein the motion plate is one of coupled in parallel with the film-bulk acoustic resonator and in series with the film-bulk acoustic resonator.

6. The method of claim 1 wherein the motion plate one of moves along a first axis that is substantially parallel to the plane of the film-bulk acoustic resonator, moves along a second axis that is substantially perpendicular to the plane of the film-bulk acoustic resonator, and rotates about a third axis.

7. The method of claim 1 wherein the motion plate is one of disposed at a predetermined distance from the film-bulk acoustic resonator and disposed at a predetermined distance from a conductive pad that is electrically coupled to the top electrode of the film-bulk acoustic resonator.

8. A target environmental variable detection apparatus comprising:

a first film-bulk acoustic resonator (FBAR) that includes a FBAR wafer;

an acoustic reflector formed in the FBAR wafer that includes a surface;

a first electrode formed on the surface of the acoustic reflector;

wherein the first electrode includes a surface;

a piezoelectric layer formed on the surface of the first electrode;

wherein the piezoelectric layer includes a surface;

a second electrode formed on the surface of the piezoelectric layer; and

a motion plate spaced from the first FBAR;

wherein the motion plate is capacitively coupled to the first FBAR.

9. The apparatus of claim 8 wherein the motion plate is one of coupled in parallel with the first film-bulk acoustic resonator and in series with the first film-bulk acoustic resonator.

10. The apparatus of claim 8 wherein the motion plate one of moves along a first axis that is substantially parallel to the plane of the first film-bulk acoustic resonator, moves along a second axis that is substantially perpendicular to the plane of the first film-bulk acoustic resonator, and rotates about a third axis.

11. The apparatus of claim 8 wherein the motion plate is one of disposed at a predetermined distance from the first film-bulk acoustic resonator and disposed at a predetermined distance from a conductive pad that is electrically coupled to a top electrode of the first film-bulk acoustic resonator.

12. The apparatus of claim 8 wherein the acoustic reflector is one of an air gap and an acoustic Bragg reflector;

wherein the apparatus further comprises a support structure that couples the motion plate to the FBAR wafer.

13. The apparatus of claim 8 further comprising:

a microcap wafer that encapsulates the first FBAR; and

a support structure that couples the motion plate to the microcap wafer.

14. The apparatus of claim 8 further comprising:

a second acoustic reflector formed in the FBAR wafer that includes a surface;

a third electrode formed on the surface of the second acoustic reflector;

wherein the third electrode includes a surface;

a second piezoelectric layer formed on the surface of the third electrode;

wherein the second piezoelectric layer includes a surface;

a fourth electrode formed on the surface of the second piezoelectric layer.

15. The apparatus of claim 14 further comprising:

a stationary plate spaced from and capacitively coupled to the second FBAR;

wherein the stationary plate moves along at least one less axis of motion than the motion plate.

16. The apparatus of claim 15 wherein the stationary plate is one of coupled in parallel with the second film-bulk acoustic resonator and in series with the second film-bulk acoustic resonator.

17. The apparatus of claim 15 wherein the stationary plate is one of disposed at a predetermined distance from the first film-bulk acoustic resonator and disposed at a predetermined distance from a conductive pad that is electrically coupled to a top electrode of the second film-bulk acoustic resonator.

18. The apparatus of claim 8 wherein the first FBAR includes a resonant frequency, a quality factor, and a resonant property;

and

wherein changes in the capacitance between the motion plate and the first FBAR cause a change in one of the resonant frequency, the quality factor, and the resonant property of the first FBAR.

19. The apparatus of claim 8 wherein the apparatus is implemented as one of a pressure sensor, microphone, accelerometer and vibrometer.