Atomic layer deposition method of depositing an oxide on a substrate

• US 7,431,966 B2
• Filed: 12/09/2003
• Issued: 10/07/2008
• Est. Priority Date: 12/09/2003
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Derderian, Garo J., Meng, Shuang, Dynka, Danny
• Primary Examiner(s): Meeks; Timothy
• Assistant Examiner(s): GAMBETTA, KELLY M
• Application Number:
  US10/733,201
• Publication Number:
  US 20050123690A1
• Time in Patent Office: 1,764 Days
• Field of Search: 427/255.28, 427/569, 427/126.3, 427/255.31, 427/255.32, 427/255.34, 427/255.37
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions

Abstract

The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O₂ and O₃ and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

Claims

1. An atomic layer deposition method of depositing an oxide on a substrate comprising:

providing a substrate within a deposition chamber;

chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

contacting the chemisorbed first species with remote plasma oxygen derived at least in part from at least one of O₂ and O₃ and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer; and

successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous electrically conductive oxide comprising In_xSn_yO, on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber simultaneously.

2. An atomic layer deposition method of depositing an oxide on a substrate comprising:

providing a substrate within a deposition chamber;

chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

contacting the chemisorbed first species with remote plasma oxygen derived at least in part from at least one of O₂ and O₃ and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer; and

successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous electrically conductive oxide comprising In_xSn_yO, on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber at different times.

3. The method of claim 2 wherein the different times overlap one another.

4. The method of claim 2 wherein the different times are spaced from one another.

5. An atomic layer deposition method of depositing an oxide on a substrate comprising:

providing a substrate within a deposition chamber;

chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

contacting the chemisorbed first species with remote plasma oxygen derived at least in part from at least one of O₂ and O₃ and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being fed separately to the deposition chamber simultaneously; and

successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate.

6. An atomic layer deposition method of depositing an oxide on a substrate comprising:

providing a substrate within a deposition chamber;

chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

contacting the chemisorbed first species with remote plasma oxygen derived at least in part from at least one of O₂ and O₃ and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer, the remote plasma oxygen and the remote plasma nitrogen being generated in different remote plasma generating chambers; and

successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate.

7. The method of claim 6 wherein the remote plasma oxygen and the remote plasma nitrogen are fed as a mixture to the deposition chamber.

8. An atomic layer deposition method of depositing an oxide on a substrate comprising:

providing a substrate within a deposition chamber;

chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

feeding a) at least one of O₂ and O₃, and b) nitrogen to a remote plasma generator and forming a mixture of remote plasma oxygen and remote plasma nitrogen therefrom, the mixture comprising the remote plasma nitrogen at from 0.1% to 10% by volume of all remote plasma oxygen and remote plasma nitrogen generated by the generator

feeding the remote plasma mixture to the deposition chamber and to contact the chemisorbed first species effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer; and

successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber at different times.

9. An atomic layer deposition method of depositing an oxide on a substrate comprising:

providing a substrate within a deposition chamber;

chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

feeding a) at least one of O₂ and O₃, and b) nitrogen to a remote plasma generator and forming a mixture of remote plasma oxygen and remote plasma nitrogen therefrom, the mixture comprising the remote plasma nitrogen at from 0.1% to 10% by volume of all remote plasma oxygen and remote plasma nitrogen generated by the generator;

feeding the remote plasma mixture to the deposition chamber and to contact the chemisorbed first species effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer; and

successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous oxide on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber simultaneously.

10. The method of claim 9 wherein the different times overlap one another.

11. The method of claim 9 wherein the different times are spaced from one another.