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Atomic layer deposition method of depositing an oxide on a substrate

  • US 7,431,966 B2
  • Filed: 12/09/2003
  • Issued: 10/07/2008
  • Est. Priority Date: 12/09/2003
  • Status: Active Grant
First Claim
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1. An atomic layer deposition method of depositing an oxide on a substrate comprising:

  • providing a substrate within a deposition chamber;

    chemisorbing a first species to form a first species monolayer onto the substrate within the deposition chamber from a gaseous precursor;

    contacting the chemisorbed first species with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer; and

    successively repeating the chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen effective to form porous electrically conductive oxide comprising InxSnyO, on the substrate, the gaseous precursor comprising an indium-containing precursor and a tin-containing precursor which are fed to the deposition chamber simultaneously.

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