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Limited thermal budget formation of PMD layers

  • US 7,431,967 B2
  • Filed: 01/14/2004
  • Issued: 10/07/2008
  • Est. Priority Date: 09/19/2002
  • Status: Expired due to Fees
First Claim
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1. A method of filling a gap defined by adjacent raised features on a substrate, comprising:

  • providing a flow of a silicon-containing processing gas to a chamber housing the substrate;

    providing a flow of an oxidizing processing gas to the chamber;

    providing a flow of a phosphorous-containing processing gas to the chamber;

    depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas, the phosphorous-containing processing gas, and the oxidizing processing gas, wherein depositing the conformal layer comprises varying between a beginning and end of the depositing of the conformal layer, and throughout the depositing of the conformal layer a ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas);

    (oxidizing processing gas) and maintaining the temperature of the substrate below about 500°

    C. throughout deposition of the conformal layer; and

    thereafter, depositing a second portion of the P-doped silicon oxide film as a bulk layer, wherein depositing a second portion of the film comprises maintaining the ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas);

    (oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500°

    C. throughout deposition of the bulk layer.

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