Light emitting diode with conducting metal substrate

• US 7,432,119 B2
• Filed: 01/11/2005
• Issued: 10/07/2008
• Est. Priority Date: 01/11/2005
• Status: Active Grant

• Current Assignee: Foshan Nationstar Semiconductor Co., Ltd. (Foshan Nationstar Optoelectronics Company Limited)
• Original Assignee: SemiLEDs Corporation (SemiLEDs Inc)
• Inventors: Doan, Trung Tri
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US11/032,882
• Publication Number:
  US 20060154389A1
• Time in Patent Office: 1,365 Days
• Field of Search: 438 22- 47, 438106-127, 438/459, 438/977
• US Class Current: 438/33
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Claims

1. A method for fabricating an n-GaN up light-emitting diode (LED) wafer, comprising:

providing a carrier substrate;

depositing an n-GaN portion above the carrier substrate;

depositing one or more active layers above the n-GaN portion;

depositing a p-GaN portion above the active layers;

depositing one or more first metal layers above the p-GaN portion;

applying a masking layer above the first metal layers;

etching portions of the first metal layers, the p-GaN layer, the active layers, and the n-GaN layer according to the masking layer;

removing the masking layer;

depositing a passivation layer above remaining portions of the first metal layers, the p-GaN layer, the active layers, and the n-GaN layer;

removing a portion of the passivation layer to expose the remaining portions of the first metal layers;

depositing two or more second metal layers to form a metal substrate;

wherein depositing the two or more second metal layers comprises at least one of chemical vapor deposition, electrochemical deposition, electroless chemical deposition, plasma enhanced chemical vapor deposition, physical vapor deposition, atomic layer deposition, metal organic chemical vapor deposition, evaporation, ion beam deposition, sputtering and plasma spray; and

removing the carrier substrate to expose the n-GaN portion.

2. The method of claim 1, wherein the n-GaN up LED wafer is substantially smooth and flat.

3. The method of claim 2, wherein the n-GaN up LED wafer has a surface roughness less than 10000 angstrom.

4. The method of claim 1 wherein the carrier substrate is sapphire.

5. The method of claim 1, wherein the metal substrate is a metal or metal alloy comprising at least one of copper, nickel, aluminum, Ti, Ta, Mo, and W.

6. The method of claim 1, wherein removing the carrier substrate comprises at least one of laser lift-off (LLO), wet etching, and chemical mechanical polishing (CMP).