Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising:
- forming a device isolation, a first conductivity type region, and a second conductivity type region on a semiconductor substrate;
depositing a gate insulating film on the semiconductor substrate;
forming a first metal film on the gate insulating film;
forming a region of a second metal film so as to cover a region that forms a gate electrode of the first conductivity type region;
removing the first metal film exposed outside the region of the second metal film by wet etching to expose the gate insulating film;
forming a third metal film on the second metal film and on the exposed gate insulating film;
depositing a protecting film on the third metal film; and
patterning the first metal film, the second metal film, the third metal film, and the protecting film to form the gate electrode.
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Accused Products
Abstract
A method of manufacturing a semiconductor device comprises: forming a device isolation, a first conductivity type region, and a second conductivity type region on a semiconductor substrate; depositing a gate insulating film on an entire surface of the semiconductor substrate; forming a first metal film on the gate insulating film; forming a region of a second metal film so as to cover a region that forms a gate electrode of the first conductivity type region; removing the first metal film exposed outside the region of the second metal film by wet etching to expose the gate insulating film; forming a third metal film on the entire surface of the semiconductor substrate; depositing a protecting film on the third metal film; and patterning the first metal film, the second metal film, the third metal film, and the protecting film to form the gate electrode.
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Citations
20 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming a device isolation, a first conductivity type region, and a second conductivity type region on a semiconductor substrate; depositing a gate insulating film on the semiconductor substrate; forming a first metal film on the gate insulating film; forming a region of a second metal film so as to cover a region that forms a gate electrode of the first conductivity type region; removing the first metal film exposed outside the region of the second metal film by wet etching to expose the gate insulating film; forming a third metal film on the second metal film and on the exposed gate insulating film; depositing a protecting film on the third metal film; and patterning the first metal film, the second metal film, the third metal film, and the protecting film to form the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device comprising:
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forming a device isolation;
a first conductivity type region, and a second conductivity type region on a semiconductor substrate;forming a first dummy gate in a region that forms a gate electrode of the first conductivity type and a second dummy gate in a region that forms a gate electrode of the second conductivity type on the semiconductor substrate; forming gate sidewalls made of insulator on both sides of the first and second dummy gates; covering the region other than the first and second dummy gates on the semiconductor substrate; selectively removing the first and second dummy gates with the gate insulating film and the gate sidewalls being covered; forming a gate insulating film on a surface of the semiconductor substrate exposed by removal of the first and second dummy gates; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; removing the second metal film in the region having the second dummy gate formed therein while the second metal film is covered in the region having the first dummy gate formed therein; removing, by wet etching, the first metal film in the region having the second dummy gate formed therein while the first metal film is covered thereon with the second metal film in the region having the first dummy gate formed therein, thereby exposing the gate insulating film; forming a third metal film at least on the gate insulating film exposed in the region having the second dummy gate formed therein; and removing the first metal film, the second metal film and the third metal film except the regions having the first and second dummy gates formed therein. - View Dependent Claims (12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device including a semiconductor layer having a first conductivity type region and a second conductivity type region formed therein, a gate insulating film formed on the semiconductor layer, a first gate electrode provided on the gate insulating film in the first conductivity type region, and a second gate electrode provided on the gate insulating film in the second conductivity type region,
the first gate electrode having a first metal film provided on the gate insulating film and a second metal film provided on the first metal film, and the second gate electrode having a third metal film provided on the gate insulating film, the method comprising: -
forming the first metal film on the gate insulating film; removing, by wet etching, the first metal film in the region where the second gate electrode is formed while the first metal film is covered with the second metal film in the region where the first gate electrode is formed; and forming a third metal film at least in the region where the second gate electrode is formed. - View Dependent Claims (17, 18, 19, 20)
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Specification