Integrated circuit comprising an active optical device having an energy band engineered superlattice

• US 7,432,524 B2
• Filed: 09/09/2004
• Issued: 10/07/2008
• Est. Priority Date: 06/26/2003
• Status: Expired due to Term

• Current Assignee: Atomera Incorporated
• Original Assignee: Mears Technologies Incorporated
• Inventors: Mears, Robert J., Stephenson, Robert John
• Primary Examiner(s): Pham; Long
• Application Number:
  US10/936,903
• Publication Number:
  US 20050029511A1
• Time in Patent Office: 1,489 Days
• Field of Search: 257/15, 257/13, 257/21
• US Class Current: 257/15
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/152 with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The integrated circuit may further include a waveguide coupled to the at least one active optical device.

Claims

1. An integrated circuit comprising:

at least one active optical device comprising a superlattice including a plurality of stacked groups of layers;

each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing semiconductor portions being chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween, the non-semiconductor selected from the group consisting of at least one of oxygen, nitrogen, fluorine, and carbon; and

a waveguide coupled to said at least one active optical device.

2. The integrated circuit of claim 1 wherein said at least one active optical device comprises an optical transmitter.

3. The integrated circuit of claim 2 wherein at least one portion of said superlattice defines an optical emission region of said optical transmitter coupled to said waveguide;

and wherein said optical transmitter further comprises at least one facet adjacent said optical emission region for defining an optical beam.

4. The integrated circuit of claim 1 wherein said at least one active optical device comprises an optical receiver.

5. The integrated circuit of claim 4 wherein said at least one portion of said superlattice defines an optical detector region of said optical receiver coupled to said waveguide;

and wherein said optical receiver further comprises a light absorbing region adjacent said optical detector for absorbing scattered light.

6. The integrated circuit of claim 1 wherein said waveguide also comprises said superlattice.

7. The integrated circuit of claim 6 wherein said waveguide further comprises a layer on said superlattice.

8. The integrated circuit of claim 7 wherein said layer comprises an epitaxial silicon layer.

9. The integrated circuit of claim 6 wherein said superlattice of said waveguide has an increased thickness adjacent said at least one active optical device.

10. The integrated circuit of claim 1 wherein said superlattice has a common energy band structure therein.

11. The integrated circuit of claim 1 wherein said superlattice has a higher charge carrier mobility than would otherwise be present without said at least one non-semiconductor monolayer.

12. The integrated circuit of claim 1 wherein each base semiconductor portion comprises silicon.

13. The integrated circuit of claim 1 wherein each base semiconductor portion comprises germanium.

14. The integrated circuit of claim 1 wherein each energy band-modifying layer consists of oxygen.

15. The integrated circuit of claim 1 wherein each energy band-modifying layer is a single monolayer thick.

16. The integrated circuit of claim 1 wherein each base semiconductor portion is less than eight monolayers thick.

17. The integrated circuit of claim 1 wherein said superlattice further has a substantially direct energy bandgap.

18. The integrated circuit of claim 1 wherein said superlattice further comprises a base semiconductor cap layer on an uppermost group of layers.

19. An integrated circuit comprising:

an optical transmitter;

an optical receiver spaced apart from said optical transmitter; and

a waveguide coupled between said optical transmitter and said optical receiver;

said optical transmitter and optical receiver each comprising a superlattice including a plurality of stacked groups of layers, each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing semiconductor portions being chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween, the non-semiconductor selected from the group consisting of at least one of oxygen, nitrogen, fluorine, and carbon.

20. The integrated circuit of claim 19 wherein at least one portion of said superlattice defines an optical emission region of said optical transmitter coupled to said waveguide;

and wherein said optical transmitter further comprises at least one facet adjacent said optical emission region for defining an optical beam.

21. The integrated circuit of claim 19 wherein said at least one portion of said superlattice defines an optical detector region of said optical receiver coupled to said waveguide;

and wherein said optical receiver further comprises a light absorbing region adjacent said optical detector for absorbing scattered light.

22. The integrated circuit of claim 19 wherein said waveguide also comprises said superlattice.

23. The integrated circuit of claim 22 wherein said waveguide further comprises a layer on said superlattice.

24. The integrated circuit of claim 23 wherein said layer comprises an epitaxial silicon layer.

25. The integrated circuit of claim 22 wherein said superlattice of said waveguide has an increased thickness adjacent said at least one active optical device.

26. The integrated circuit of claim 19 wherein said superlattice has a common energy band structure therein.

27. The integrated circuit of claim 19 wherein said superlattice has a higher charge carrier mobility than would otherwise be present without said at least one non-semiconductor monolayer.

28. The integrated circuit of claim 19 wherein each base semiconductor portion comprises silicon.

29. The integrated circuit of claim 19 wherein each base semiconductor portion comprises germanium.

30. The integrated circuit of claim 19 wherein each energy band-modifying layer consists of oxygen.

31. The integrated circuit of claim 19 wherein each energy band-modifying layer is a single monolayer thick.

32. The integrated circuit of claim 19 wherein each base semiconductor portion is less than eight monolayers thick.

33. The integrated circuit of claim 19 wherein said superlattice further has a substantially direct energy bandgap.

34. The integrated circuit of claim 19 wherein said superlattice further comprises a base semiconductor cap layer on an uppermost group of layers.