Light emitting apparatus and method for manufacturing the same

• US 7,432,529 B2
• Filed: 06/02/2005
• Issued: 10/07/2008
• Est. Priority Date: 11/09/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Murakami, Satoshi, Yamazaki, Shunpei, Sakakura, Masayuki
• Primary Examiner(s): Menz; Douglas M
• Application Number:
  US11/142,275
• Publication Number:
  US 20050224820A1
• Time in Patent Office: 1,223 Days
• Field of Search: 257/72, 257/79, 257/88, 438/149, 438/151, 438/164
• US Class Current: 257/72
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/80524 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 71/851 Division of substrate

Abstract

The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements.

Claims

1. A light emitting device comprising:

a transistor over an insulating surface comprising;

a semiconductor layer comprising a channel forming region, a source region and a drain region;

a gate insulation film; and

a gate electrode;

a first insulating layer over the transistor;

a second insulating layer over the first insulating layer;

a third insulating layer over the second insulating layer;

a cathode over the first insulating layer and electrically connected to one of the source region and the drain region;

a light-emitting layer over the cathode;

an anode over the third insulating layer and the light-emitting layer;

a seal pattern over the second insulating layer; and

a sealing plate over the anode and the seal pattern,

wherein the seal pattern is separated from the anode, and

wherein the seal pattern does not overlap the light-emitting layer.

2. A light emitting device according to claim 1, wherein the first insulating layer comprises an organic material.

3. A light emitting device according to claim 1, wherein the first insulating layer comprises an inorganic material.

4. A light emitting device according to claim 3, wherein the first insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

5. A light emitting device according to claim 1, wherein the second insulating layer comprises an organic material.

6. A light emitting device according to claim 1, wherein the third insulating layer comprises an inorganic material.

7. A light emitting device according to claim 6, wherein the third insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

8. A light emitting device according to claim 1, wherein the light-emitting layer comprises an organic material.

9. A light emitting device according to claim 1, further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.

10. A light emitting device according to claim 9, wherein the seal pattern is overlapped with the driving circuit.

11. A light emitting device according to claim 1, wherein the seal pattern is located over the second insulating layer.

12. A light emitting device comprising:

a transistor over an insulating surface comprising;

a semiconductor layer comprising a channel forming region, a source region and a drain region;

a gate insulation film; and

a gate electrode;

a first insulating layer over the transistor;

a second insulating layer over the first insulating layer;

a third insulating layer over the second insulating layer;

a cathode over the first insulating layer and electrically connected to one of the source region and the drain region;

a light-emitting layer over the cathode;

an anode over the third insulating layer and the light-emitting layer;

a seal pattern in contact with the third insulating layer; and

a sealing plate over the anode and the seal pattern,

wherein the seal pattern is separated from the anode, and

wherein the seal pattern does not overlap the light-emitting layer.

13. A light emitting device according to claim 12, wherein the first insulating layer comprises an organic material.

14. A light emitting device according to claim 12, wherein the first insulating layer comprises an inorganic material.

15. A light emitting device according to claim 14, wherein the first insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

16. A light emitting device according to claim 12, wherein the second insulating layer comprises an organic material.

17. A light emitting device according to claim 12, wherein the third insulating layer comprises an inorganic material.

18. A light emitting device according to claim 17, wherein the third insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

19. A light emitting device according to claim 12, wherein the light:

emitting layer comprises an organic material.

20. A light emitting device according to claim 12, further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.

21. A light emitting device according to claim 20, wherein the seal pattern is overlapped with the driving circuit.

22. A light emitting device comprising:

a transistor over an insulating surface comprising;

a semiconductor layer comprising a channel forming region, a source region and a drain region;

a gate insulation film; and

a gate electrode;

a first organic insulating layer over the transistor;

a first inorganic insulating layer over the first organic insulating layer;

a second organic insulating layer over the first inorganic insulating layer;

a second inorganic insulating layer over the second organic insulating layer;

a cathode over the first inorganic insulating layer and electrically connected to one of the source region and the drain region;

a light-emitting layer over the cathode;

an anode over the second inorganic insulating layer and the light-emitting layer;

a seal pattern over the insulating surface; and

a sealing plate over the anode and the seal pattern,

wherein the seal pattern is separated from the anode, and

wherein the seal pattern does not overlap the light-emitting layer.

23. A light emitting device according to claim 22, wherein the second inorganic insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

24. A light emitting device according to claim 22, wherein the light emitting layer comprises an organic material.

25. A light emitting device according to claim 22, further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.

26. A light emitting device according to claim 25, wherein the seal pattern is overlapped with the driving circuit.

27. A light emitting device comprising:

a transistor over an insulating surface comprising;

a semiconductor layer comprising a channel forming region, a source region and a drain region;

a gate insulation film; and

a gate electrode;

a first organic insulating layer over the transistor;

a first inorganic insulating layer over the first organic insulating layer;

a second organic insulating layer over the first inorganic insulating layer;

a second inorganic insulating layer over the second organic insulating layer;

a cathode over the first inorganic insulating layer and electrically connected to one of the source region and the drain region;

a light-emitting layer over the cathode;

an anode over the second inorganic insulating layer and the light-emitting layer;

a seal pattern in contact with the second inorganic insulating layer; and

a sealing plate over the anode and the seal pattern,

wherein the seal pattern is separated from the anode, and

wherein the seal pattern does not overlap the light-emitting layer.

28. A light emitting device according to claim 27, wherein the second inorganic insulating layer comprises a material selected from the group consisting of silicon nitride and aluminum nitride.

29. A light emitting device according to claim 27, wherein the light-emitting layer comprises an organic material.

30. A light emitting device according to claim 27, further comprising a driving circuit around a pixel region, wherein the transistor is formed in the pixel region.

31. A light emitting device according to claim 30, wherein the seal pattern is overlapped with the driving circuit.