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Light emitting apparatus and method for manufacturing the same

  • US 7,432,529 B2
  • Filed: 06/02/2005
  • Issued: 10/07/2008
  • Est. Priority Date: 11/09/2001
  • Status: Expired due to Fees
First Claim
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1. A light emitting device comprising:

  • a transistor over an insulating surface comprising;

    a semiconductor layer comprising a channel forming region, a source region and a drain region;

    a gate insulation film; and

    a gate electrode;

    a first insulating layer over the transistor;

    a second insulating layer over the first insulating layer;

    a third insulating layer over the second insulating layer;

    a cathode over the first insulating layer and electrically connected to one of the source region and the drain region;

    a light-emitting layer over the cathode;

    an anode over the third insulating layer and the light-emitting layer;

    a seal pattern over the second insulating layer; and

    a sealing plate over the anode and the seal pattern,wherein the seal pattern is separated from the anode, andwherein the seal pattern does not overlap the light-emitting layer.

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