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Body biasing structure of SOI

  • US 7,432,552 B2
  • Filed: 06/12/2006
  • Issued: 10/07/2008
  • Est. Priority Date: 06/11/2005
  • Status: Active Grant
First Claim
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1. A body biasing structure for Silicon-On-Insulator (SOI) devices comprising:

  • an SOI substrate;

    an active region in the SOI substrate comprising;

    a body biasing contact region;

    a common active region connected to the body biasing contact region; and

    a device active region connected to the common active region;

    a first conducting layer, which is formed on an insulating layer over both one part of the body biasing contact region and one part of the common active region;

    a second conducting layer, which is formed on an insulating layer over the device active region;

    a source region, which is formed in the other part of the common active region, over which the first conducting layer is not formed;

    a common source/drain region, which is formed in the device active region between the first conducting layer and the second conducting layer; and

    a body region, which is formed in the active region, where the source region and the common source/drain region are not formed,wherein the common source/drain region has a shallow junction to enable the second conducting layer to body bias through a body contact, which is formed on the body biasing contact region.

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