Fast current control of inductive loads

• US 7,433,171 B2
• Filed: 04/18/2003
• Issued: 10/07/2008
• Est. Priority Date: 10/21/2000
• Status: Expired due to Fees

• Current Assignee: TRW Limited (Zeppelin - Stiftung der Stadt Friedrichshafen)
• Original Assignee: TRW Limited (Zeppelin - Stiftung der Stadt Friedrichshafen)
• Inventors: Vincent, Kenneth, Knight, Peter J.
• Primary Examiner(s): Sherry; Michael J
• Assistant Examiner(s): Nguyen; Danny
• Application Number:
  US10/418,960
• Publication Number:
  US 20040057183A1
• Time in Patent Office: 1,999 Days
• Field of Search: 361/91.1, 361/111, 361/139, 361/143, 361/146, 361/152, 361/154, 361/159, 361/160
• US Class Current: 361/159
• CPC Class Codes: H01F 7/18 Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
• CPC Class Codes: H01F 7/1811 demagnetising upon switching off, removing residual magnetism

Abstract

A circuit arrangement for the fast dissipation of the stored magnetic energy in an inductive load controlled by a first switch, comprising a high voltage-drop energy dissipation path disposed across the first switch and a second switch by which a constant-voltage diode drop path across the load can be selectively opened.

Claims

1. A circuit arrangement for the fast dissipation of the stored magnetic energy in an inductive load, the circuit arrangement comprising of:

an inductive load;

a constant-voltage-drop diode path across said inductive load, said constant-voltage-drop diode path including a first constant-voltage diode;

a first switch connected to said inductive load and operable to control same, said first switch being a field effect transistor having a drain terminal connected to said inductive load and a gate terminal;

a high-voltage-drop energy dissipation path also that includes a series combination of a voltage regulating diode and a second constant-voltage diode connected between said drain and gate terminals of said field effect transistor; and

a second switch that is operable to selectively make and break said constant-voltage drop diode path, so that while said second switch is closed to make said constant-voltage-drop diode path, dissipation of the stored magnetic energy is able to take place due to current flow through said constant-voltage-drop diode path, and so that opening said second switch to break said constant-voltage-drop diode path, in response to excess current in the inductive load, enables current flow through the high-voltage-drop energy dissipation path and consequent fast dissipation of the stored magnetic energy.

2. A circuit arrangement as claimed in claim 1, wherein said field effect transistor is a first field effect transistor and further wherein said second switch is a second field effect transistor in series with said first constant-voltage diode and said second field effect transistor and said constant-voltage diode are connected across said inductive load.

3. A circuit arrangement for the fast dissipation of the stored magnetic energy in each of a plurality of inductive loads with each of the inductive loads controlled by a corresponding first switch, the circuit comprising:

a plurality of high-voltage-drop energy dissipation paths, with one of said high-voltage-drop energy dissipation paths disposed across each of the first switches;

a plurality of constant-voltage diode drop paths, with each of said constant-voltage diode drop paths connected across a corresponding one of the inductive loads; and

a second switch commonly connected to said constant-voltage diode drop paths, said second switch selectively operative to control the opening of said constant-voltage diode drop paths to redirect current flowing through the constant-voltage diode drop paths to flow through the high-voltage drop energy dissipation paths whereby energy stored in the inductive loads is dissipated at a higher rate.

4. A circuit arrangement for the fast dissipation of the stored magnetic energy in each of a plurality of inductive loads with each of the inductive loads controlled by a corresponding first switch, the circuit comprising:

a plurality of high-voltage-drop energy dissipation paths, with one of said high-voltage-drop energy dissipation paths disposed across each of the first switches;

a plurality of constant-voltage diodes, with each of said constant-voltage diodes connected across a corresponding one of the inductive loads to provide a constant-voltage drop path across said corresponding inductive load; and

a single field effect transistor commonly connected to said plurality of constant voltage diodes with said field effect transistor cooperating with each of said constant voltage diodes to form a series circuit across a corresponding series combination of one of the inductive loads and a current sensing element.

5. A circuit arrangement as claimed in claim 4 wherein each of said first switches comprise a switching transistor and each of said high-voltage drop energy dissipation paths includes a voltage regulating diode connected in parallel with the switching path of said switching transistor.

6. A circuit arrangement as claimed in claim 5 wherein each of said first switching transistors is a field effect transistor with said voltage regulating diode connected between the source and drain terminals of said field effect transistor.

7. A circuit arrangement as claimed in claim 6 wherein each of said voltage regulating diodes is a Zener diode.

8. A circuit arrangement as claimed in claim 5 wherein each of said first switching transistors is a field effect transistor and further wherein said voltage regulating diode is connected, in series with a second constant-voltage diode, between the drain and gate terminals of said field effect transistor.

9. A circuit arrangement as claimed in claim 8 wherein each of said voltage regulating diodes is a Zener diode.

10. A circuit arrangement for the fast dissipation of the stored magnetic energy in an inductive load, the circuit arrangement comprising:

an inductive load;

a current sensing element connected in a series combination with said inductive load;

a constant-voltage-drop diode path connected across said series combination of said inductive load and said current sensing element, said constant-voltage-drop diode path including a first constant-voltage diode;

a first switch connected to said inductive load and operable to control same, said first switch being a field effect transistor having a drain terminal connected to said inductive load and a gate terminal;

a high-voltage-drop energy dissipation path connected between said drain and gate terminals of said field effect transistor, said high-voltage dissipation path including a series combination of a voltage regulating diode and a second constant-voltage diode; and

a second switch that is operable to selectively make and break said constant-voltage drop diode path, so that while said second switch is closed to make said constant-voltage-drop diode path, dissipation of the stored magnetic energy is able to take place due to current flow through said constant-voltage-drop diode path, and so that opening said second switch to break said constant-voltage-drop diode path, in response to excess current in the inductive load as sensed by said current sensing element, enables current flow through the high-voltage-drop energy dissipation path and consequent fast dissipation of the stored magnetic energy.

11. A circuit arrangement as claimed in claim 10, wherein said field effect transistor is a first field effect transistor and further wherein said second switch is a second field effect transistor connected in series with said first constant-voltage diode and further wherein said second field effect transistor and said first constant-voltage diode are connected across said series combination of said inductive load and said current sensing element.