InP based long wavelength VCSEL
First Claim
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1. A long wavelength vertical cavity surface emitting laser comprising:
- a substrate;
a first mirror proximate said substrate and having a plurality of layers including at least one pair of layers having a non-oxidized AlGaInAs layer and an oxidized layer, wherein the oxidized layer comprises at least one of oxidized InGaAsP, InAlAs, InAlGaAs, AlAsSb, AlGaAsSb, AlGaPSb or AlPSb;
a cavity proximate to said first mirror;
a second mirror proximate to said cavity, said second mirror comprising a partially oxidized layer for confining current; and
at least two contacts configured to cause current to flow through at least a portion of the vertical cavity surface emitting laser.
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Abstract
A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.
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Citations
8 Claims
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1. A long wavelength vertical cavity surface emitting laser comprising:
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a substrate; a first mirror proximate said substrate and having a plurality of layers including at least one pair of layers having a non-oxidized AlGaInAs layer and an oxidized layer, wherein the oxidized layer comprises at least one of oxidized InGaAsP, InAlAs, InAlGaAs, AlAsSb, AlGaAsSb, AlGaPSb or AlPSb; a cavity proximate to said first mirror; a second mirror proximate to said cavity, said second mirror comprising a partially oxidized layer for confining current; and at least two contacts configured to cause current to flow through at least a portion of the vertical cavity surface emitting laser. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification