Ruthenium thin film-formed structure

• US 7,435,484 B2
• Filed: 09/01/2006
• Issued: 10/14/2008
• Est. Priority Date: 09/01/2006
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Inoue, Hiroaki, Shinriki, Hiroshi
• Primary Examiner(s): DYE, RENA
• Application Number:
  US11/469,828
• Publication Number:
  US 20080054472A1
• Time in Patent Office: 774 Days
• Field of Search: 428/607, 428/670, 428/656, 428/669, 428/674, 428/680, 428/650, 428/679, 428/214, 428/215, 428/216, 428/332, 428/333, 428/336, 428/338, 428/457
• US Class Current: 428/670
• CPC Class Codes: C23C 16/02 Pretreatment of the material to be coated C23C16/04 takes precedence
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 2221/1089 Stacks of seed layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/12875 Platinum group metal-base component
• CPC Class Codes: Y10T 428/12903 Cu-base component
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.

Claims

1. A ruthenium thin film-formed structure comprising:

a substrate;

a ruthenium thin film formed on the substrate, which ruthenium thin film has a thickness of no less than 0.5 nm but no more than 2.0 nm and is continuous with substantially no pinholes in the entirety of said film, said ruthenium thin film being formed by atomic layer deposition using a ruthenium complex containing a non-cyclic dienyl.

2. The ruthenium thin film-formed structure according to claim 1, wherein the substrate has a metal film, and the ruthenium thin film is formed on the metal film.

3. The ruthenium thin film-formed structure according to claim 2, wherein the metal film is selected from the group consisting of WNC, WN, TaN, Ta, TaNC, TIN, Ti, Cu, Al, Go, and Ni.

4. The ruthenium thin film-formed structure according to claim 1, further comprising a copper film on the ruthenium thin film.

5. The ruthenium thin film-formed structure according to claim 4, wherein the copper film is formed by CVD or plating.

6. The ruthenium thin film-formed structure according to claim 1, wherein the substrate has a surface including trenches and vias, and the ruthenium thin film is formed on the surface.

7. The ruthenium thin film-formed structure according to claim 3, further comprising a copper film formed in contact with and on the ruthenium thin film.

8. The ruthenium thin film-formed structure according to claim 1, wherein the ruthenium complex has a structure of Xa-Ru-Xb, wherein at least one of Xa or Xb is a non-cyclic dienyl.

9. The ruthenium thin film-formed structure according to claim 8, wherein the non-cyclic dienyl is a non-cyclic pentadienyl.

10. The ruthenium thin film-formed structure according to claim 9, wherein the non-cyclic pentadienyl has at least one side chain of C1-2 alkyl.

11. The ruthenium thin film-formed structure according to claim 10, wherein the non-cyclic pentadienyl has two side chains of methyl.