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Method for fabricating CMOS image sensor

  • US 7,435,615 B2
  • Filed: 07/18/2005
  • Issued: 10/14/2008
  • Est. Priority Date: 07/20/2004
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating CMOS image sensor, comprising:

  • forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad;

    forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device;

    forming on the second planarization layer a material layer for micro-lens formation while the device protection layer covers the at least one metal pad;

    exposing a predetermined portion of the metal pad by selectively etching the device protection layer, after forming the material layer; and

    forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after said exposing the material layer for micro-lens formation.

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