Method for fabricating CMOS image sensor
First Claim
1. A method for fabricating CMOS image sensor, comprising:
- forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad;
forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device;
forming on the second planarization layer a material layer for micro-lens formation while the device protection layer covers the at least one metal pad;
exposing a predetermined portion of the metal pad by selectively etching the device protection layer, after forming the material layer; and
forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after said exposing the material layer for micro-lens formation.
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Accused Products
Abstract
A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad; forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device; forming on the second planarization layer a material layer for micro-lens formation; exposing a predetermined portion of the metal pad by selectively etching the device protection layer; and forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after the exposing step, the material layer for micro-lens formation.
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Citations
20 Claims
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1. A method for fabricating CMOS image sensor, comprising:
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forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad; forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device; forming on the second planarization layer a material layer for micro-lens formation while the device protection layer covers the at least one metal pad; exposing a predetermined portion of the metal pad by selectively etching the device protection layer, after forming the material layer; and forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after said exposing the material layer for micro-lens formation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a CMOS image sensor, comprising:
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forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad; forming a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer over the at least one photo-sensing device; forming a material layer on the second planarization layer while the device protection layer continues to cover the metal pad; after forming the material layer, exposing a predetermined portion of the metal pad by selectively etching the device protection layer; and reflowing the material layer to form a micro-lens. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification