Migration enhanced epitaxy fabrication of active regions having quantum wells

• US 7,435,660 B2
• Filed: 07/11/2006
• Issued: 10/14/2008
• Est. Priority Date: 12/21/1998
• Status: Expired due to Fees

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Johnson, Ralph H.
• Primary Examiner(s): Toledo; Fernando L
• Application Number:
  US11/456,779
• Publication Number:
  US 20060246700A1
• Time in Patent Office: 826 Days
• Field of Search: 438/29, 438/45, 438/401, 438/462, 257/94, 257/96, 257/98, 372/45.01, 372/96
• US Class Current: 438/401
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 21/02387 Group 13/15 materials
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02466 Antimonides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02549 Antimonides
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01S 2302/00 Amplification / lasing wavelength
• CPC Class Codes: H01S 2304/02 MBE
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/32358 containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
• CPC Class Codes: H01S 5/32366 (In)GaAs with small amount of N
• CPC Class Codes: H01S 5/34 : comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers H01S5/36 takes precedence
• CPC Class Codes: H01S 5/3403 : having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
• CPC Class Codes: H01S 5/3406 : including strain compensation
• CPC Class Codes: H01S 5/34306 : emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/34313 : with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/34346 : characterised by the materials of the barrier layers
• CPC Class Codes: H01S 5/34353 : based on (AI)GaAs

Abstract

Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using controlled group V fluxes and temperatures. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V materials at a given group V flux and then raising the group V flux to saturate the surface of the flattening layer with the group V material. A cap layer is also formed over the quantum well. Where nitrogen is used, the systems incorporate a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

Claims

1. A method for forming an active region associated with a semiconductor laser, the method comprising:

forming a flattening layer by;

at a first flux of a group V constituent, growing from about 10 to about 73 nitrogen-free monolayers of group III and group V constituents by alternately depositing single atomic layers of group III constituents and group V constituents in the absence of nitrogen; and

at a second group V flux that is increased with respect to the first group V flux, growing one or more additional monolayers of alternating group III and group V constituents;

forming a quantum well over the flattening layer at a flux that is greater than the first flux, wherein at least a portion of the quantum well layers contain nitrogen; and

forming a cap layer over the quantum well, the cap layer being substantially free of at least one of In or N and wherein the cap layer is not grown by migration enhanced epitaxy.

2. A method as defined in claim 1, wherein the cap layer is substantially free of N.

3. A method as defined in claim 1, wherein:

the act of alternately depositing single layers of group III and group V constituents is conducted by alternately opening and closing group III and group V shutters associated with a fabrication system used in the method so that the group III and group V shutters are not both open at the same time; and

nitrogen is absent during at least the formation of the initial layers of the quantum well by blocking any nitrogen source associated with the fabrication system by deploying a gate valve located along a nitrogen source line leading into a system used to form the active region.

4. A method as defined in claim 1, wherein by using the second group V flux that is increased with respect to the first group V flux just before and during the growth of the quantum wells, the mobility in the quantum wells is decreased substantially, thereby reducing the ability of nitrogen compounds in the quantum well to form 3 dimensional structures or segregate into different compounds.

5. A method as defined in claim 1, wherein the act of forming a flattening layer is performed at a temperature range of from about 400°

C. to about 500°

C.

6. A method as defined in claim 1, further comprising:

prior to or during an initial phase of forming the active region, cooling a substrate on which the active region is formed from a range of from about 550°

C. to about 620°

C. to a range of from about 400°

C. to about 515°

C.; and

after or during a final stage of forming the active region, rapidly heating the substrate to a range of from about 550°

C. to about 620°

C.

7. A method as defined in claim 1, wherein the one or more additional monolayers of alternating group III and group V constituents comprises from about 2 to about 5 monolayers.

8. A method as defined in claim 1, wherein the first group V flux comprises from about 5.85 E-6 Torr BEP to about 1.04 E-5 Torr BEP.

9. A method as defined in claim 1, wherein the second group V flux comprises from about 3.8 E-5 Torr BEP to about 6.00 E-5 Torr BEP.

10. A method as defined in claim 1, wherein Sb is used in the quantum well and the second group V flux comprises from about 1.2 E-5 Torr BEP to about 4 E-5 Torr BEP.

11. A method as defined in claim 1, wherein, after a final cap layer in the active region is formed, the group V flux is lowered from about 1.20 E-05 Torr BEP to about 2.13 E-5 Torr BEP.

12. A method as defined in claim 1, wherein a plurality of quantum well are formed by, after forming the cap layer, repeating one or more times the acts of forming a flattening layer, forming a quantum well, and forming a cap layer.

13. A method as defined in claim 1, wherein the group III and group V constituents comprise Ga and As, the quantum well comprises Ga, As, and at least one of In, Sb and P, and the cap layer comprises GaAs.

14. A method for forming a semiconductor laser, the method comprising the acts of:

providing a substrate;

developing a first confining region above the substrate;

above the first confining region and at a temperature of from about 400°

C. to about 515°

C., developing an active region including at least one nitrogen-containing quantum well layer grown on a nitrogen-free flattening layer, wherein developing the nitrogen-free flattening layer comprises;

using MEE, developing a first section of the flattening layer by alternately depositing single atomic layers of Ga and As without nitrogen being present, wherein depositing the single atomic layers of As is performed at a first As flux; and

using MEE, developing a second section of the flattening layer at a second As flux that is higher than the first As flux to saturate the surface of the flattening layer with As such that the flattening layer is substantially flat and useful as a basis for growing at least one nitrogen-containing quantum well layer; and

developing a second confining region above the active region.

15. A method as defined in claim 14, further comprising a cap layer formed on the at least one quantum well layer, the cap layer being substantially free of nitrogen.

16. A method as defined in claim 14, wherein developing the first confining region and developing the second confining region are each performed at a temperature above about 500°

C.

17. A method as defined in claim 14, wherein developing the first confining region and developing the second confining region are each performed at a temperature of from about 550°

C. to about 620°

C.

18. A method as defined in claim 14, wherein the first group V flux comprises from about 5.85 E-6 Torr BEP to about 1.04 E-5 Torr BEP and the second group V flux comprises from about 3.8 E-5 Torr BEP to about 6.00 E-5 Torr BEP.

19. A method as defined in claim 14, wherein Sb is used in a quantum well, the first group V flux comprises from about 5.85 E-6 Torr BEP to about 1.04 E-5 Torr BEP, and the second group V flux comprises from about 1.2 E-5 Torr BEP to about 4 E-5 Torr BEP.