Epitaxial growth method
First Claim
1. An epitaxial growth method comprising the following steps carried out in sequential order:
- forming a buffer layer on a single crystalline wafer using a single crystalline material;
forming a mask layer on the buffer layer;
forming a plurality of holes in the mask layer to expose portions of the buffer layer;
forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes;
removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and
forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.
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Abstract
Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a laser to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.
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Citations
16 Claims
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1. An epitaxial growth method comprising the following steps carried out in sequential order:
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forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An epitaxial growth method comprising:
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forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process, wherein the plurality of holes in the mask layer are formed using a laser. - View Dependent Claims (15, 16)
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Specification