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Epitaxial growth method

  • US 7,435,666 B2
  • Filed: 01/18/2006
  • Issued: 10/14/2008
  • Est. Priority Date: 01/19/2005
  • Status: Expired due to Fees
First Claim
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1. An epitaxial growth method comprising the following steps carried out in sequential order:

  • forming a buffer layer on a single crystalline wafer using a single crystalline material;

    forming a mask layer on the buffer layer;

    forming a plurality of holes in the mask layer to expose portions of the buffer layer;

    forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes;

    removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and

    forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.

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