Semiconductor device, method of manufacturing the same, electro-optic device and electronic apparatus with a protective film

• US 7,435,998 B2
• Filed: 06/18/2003
• Issued: 10/14/2008
• Est. Priority Date: 06/20/2002
• Status: Expired due to Fees

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US10/463,673
• Publication Number:
  US 20040036078A1
• Time in Patent Office: 1,945 Days
• Field of Search: 257 80- 82, 257/83, 257/76, 257/77, 257/78, 257/79, 257 98-100, 257/626, 257/E33.058, 257/E33.059, 257/E33.069, 372/46.01, 372/50.11, 372/50.124
• US Class Current: 257/98
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/76155 Jetting means, e.g. ink jet
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/12 : structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto semiconductor devices with at least one potential barrier or surface barrier adapted for light emission H01L33/00; amplifiers using electroluminescent element and photocell H03F17/00; electroluminescent light sources per se H05B33/00
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The invention provides a semiconductor device, a method of manufacturing the same, an electro-optic device and an electronic apparatus which are capable of addressing or solving a problem of mechanical mounting of a semiconductor element chip on a substrate. A semiconductor device includes a tile-shaped microelement bonded to a substrate, and an insulating functional film provided to cover at least a portion of the tile-shaped microelement.

Claims

1. A semiconductor device, comprising:

a substrate;

a tile-shaped microelement bonded to the substrate through an adhesive, wherein the tile-shaped microelement has a lower mirror, an active layer over the lower mirror, an upper mirror over the active layer, and a current aperture; and

an insulating protective film having a barrier property against oxygen and moisture, the insulating protective film provided to seal the adhesive, the lower mirror, the active layer and the upper mirror and the insulating protective film contacting the substrate.

2. The semiconductor device according to claim 1, the current aperture having ring shape.

3. The semiconductor device according to claim 2, the current aperture being a first portion made of a semiconducting material, and the first portion being surrounded by a second portion made of an insulating material.

4. The semiconductor device according to claim 3, the insulating material being an oxide layer.

5. A semiconductor device, comprising:

a substrate;

a surface emitting laser bonded to the substrate through an adhesive, the surface emitting laser having a first mirror, an active layer over the first mirror, a second mirror over the active layer, and a current aperture; and

an insulating protective film having a barrier property against oxygen and moisture, the insulating protective film provided to seal the adhesive, the first mirror, the active layer and the second mirror and the insulating protective film contacting the substrate.

6. The semiconductor device according to claim 5, the current aperture having ring shape.

7. The semiconductor device according to claim 5, the current aperture being formed by an insulating material.

8. The semiconductor device according to claim 5, the current aperture being a first portion made of a semiconducting material, and the first portion being surrounded by a second portion made of an insulating material.

9. The semiconductor device according to claim 8, the insulating material being an oxide layer.

10. The semiconductor device according to claim 5, the surface emitting laser including a highly conductive layer.

11. The semiconductor device according to claim 9, the highly conductive layer being disposed between the substrate and the first mirror.

12. The semiconductor device according to claim 5, the surface emitting laser including a first electrode being formed on the first mirror and a second electrode being formed on the second mirror through a contact layer.

13. The semiconductor device according to claim 5, the substrate being light-transmissive, and

the surface emitting laser being bonded to the substrate with an adhesive transmissive to a visible light and an infrared light.

14. The semiconductor device according to claim 5, the surface emitting laser being bonded to the substrate with an adhesive which is non-transmissive to at least one of a visible light and an infrared light.