Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate; and
at least one metal oxide semiconductor field-effect transistor (MOSFET) comprisingspaced apart source and drain regions in said semiconductor substrate,a superlattice channel comprising a plurality of stacked groups of layers on said semiconductor substrate between said source and drain regions, and having upper surface portions being vertically stepped above adjacent upper surface portions of said source and drain regions,each group of layers of said superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon,said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing semiconductor portions being chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween, the non-semiconductor selected from the group consisting of at least one of oxygen, nitrogen, fluorine, and carbon, anda gate overlying said superlattice channel.
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Abstract
A semiconductor device may include a semiconductor substrate and at least one metal oxide semiconductor field-effect transistor (MOSFET). The at least one MOSFET may include spaced apart source and drain regions in the semiconductor substrate, and a superlattice channel including a plurality of stacked groups of layers on the semiconductor substrate between the source and drain regions. The superlattice channel may have upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor. The at least one MOSFET may additionally include a gate overlying the superlattice channel.
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Citations
45 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; and at least one metal oxide semiconductor field-effect transistor (MOSFET) comprising spaced apart source and drain regions in said semiconductor substrate, a superlattice channel comprising a plurality of stacked groups of layers on said semiconductor substrate between said source and drain regions, and having upper surface portions being vertically stepped above adjacent upper surface portions of said source and drain regions, each group of layers of said superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing semiconductor portions being chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween, the non-semiconductor selected from the group consisting of at least one of oxygen, nitrogen, fluorine, and carbon, and a gate overlying said superlattice channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a semiconductor substrate; and at least one metal oxide semiconductor field-effect transistor (MOSFET) comprising spaced apart source and drain regions in said semiconductor substrate, a superlattice channel comprising a plurality of stacked groups of layers on said semiconductor substrate between said source and drain regions, and having upper surface portions being vertically stepped above adjacent upper surface portions of said source and drain regions, each group of layers of said superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing semiconductor portions being chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween, the non-semiconductor selected from the group consisting of at least one of oxygen, nitrogen, fluorine, and carbon, and a gate comprising a gate oxide layer overlying said superlattice channel and a gate electrode thereover, and said gate electrode being aligned with said superlattice channel; said semiconductor substrate comprising an underlying portion aligned with said superlattice channel. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A semiconductor device comprising:
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a semiconductor substrate; and at least one metal oxide semiconductor field-effect transistor (MOSFET) comprising spaced apart source and drain regions in said semiconductor substrate, a superlattice channel comprising a plurality of stacked groups of layers on said semiconductor substrate between said source and drain regions, and having upper surface portions being vertically stepped above adjacent upper surface portions of said source and drain regions, each group of layers of said superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing semiconductor portions being chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween, the non-semiconductor selected from the group consisting of at least one of oxygen, nitrogen, fluorine, and carbon, and a gate comprising a gate oxide layer overlying said superlattice channel, a gate electrode thereover, and sidewall spacers on opposing sides of said gate electrode, said sidewall spacers being aligned with said superlattice channel; said semiconductor substrate comprising an underlying portion aligned with said superlattice channel. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification